Radiation-enhanced channel length modulation induced by trapped charges in buried oxide layer

Abstract

By skillfully applying the voltage bias, we firstly observed radiation-enhanced channel length modulation (CLM) of main transistor in 130 nm partially-depleted SOI nMOSFETs. And we found the radiationenhanced CLM under Pass-Gate bias is more severe than that under ON bias, which reveals that the radiation-induced positive trapped charges in buried oxide is more responsible for this effect. A partially full depletion model is used to interpret this effect. And a TCAD simulation was used to verify our model. Good agreement between simulation and experiment is demonstrated. key words: buried oxide (BOX), channel length modulation (CLM), partially-depleted (PD), silicon-on-insulator (SOI), total-ionizing-dose (TID), trapped charge Classification: Electron devices This article has been accepted and published on J-STAGE in advance of copyediting. Content is final as presented.