Total Dose Irradiation-Induced Degradation of Hysteresis Effect in Partially Depleted Silicon-on-Insulator NMOSFETs

Huang, Huixiang; Bi, Dawei; Ning, Bingxu; Zhang, Yanwei; Zhang, Zhengxuan; Zou, Shichang

doi:10.1109/tns.2013.2239660

Cited by 8 publications

(6 citation statements)

References 20 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The location of the defects has been analysed, confirming that the most detrimental charge traps are located at adsorbates and in the gate insulator 57 . In addition to noise, the charge trapping events at insulator defects in the vicinity of the channel cause a hysteresis in the transfer characteristics of 2D FETs 27,58,59 that can be orders of magnitude larger than what is known from commercial silicon technologies 60 . Charge trapping can also cause apparent SS < 60 mV/decade during the 2D FET transfer characteristics measurements as shown for oxide-based FETs 61 .…”

Section: D Fet Electrical Characterizationmentioning

confidence: 98%

Transistors based on two-dimensional materials for future integrated circuits

et al. 2021

View full text Add to dashboard Cite

Field-effect transistors based on two-dimensional materials could potentially be used in very large-scale integration (VLSI) technology. But whether they can be used at the front end of line or at the back end of line through monolithic or heterogeneous integration remains to be seen. In order to achieve this, multiple challenges must be overcome including reducing contact resistance, developing stable and controllable doping schemes, advancing mobility engineering, and improving high-k dielectric integration. The large-area growth of uniform 2D layers is also required to ensure low defect density, low device-to-device variation, and clean interfaces. Here we review the development of 2D field-effect transistors for use in future VLSI technologies. We consider the key performance indicators for aggressively scaled 2D transistors and discuss how these should be extracted and reported.We also highlight potential applications of 2D transistors in conventional micro/nanoelectronics, neuromorphic computing, advanced sensing, data storage, and future interconnect technologies.

show abstract

Section: D Fet Electrical Characterizationmentioning

confidence: 98%

Transistors based on two-dimensional materials for future integrated circuits

et al. 2021

View full text Add to dashboard Cite

show abstract

“…However, as V D increases from 10 to 100 mV (see Figure 3a), two plateaus are clearly exhibited in the g m /V D curve at near V D = 100 mV, implying the emergence of channel migration, which was mainly triggered by the increasing V D , as previously described (see Figures 1ad). Indeed, the double enhancement of g m has been interpreted as the coexistence of a different conduction mechanism, e.g., MoS 2 /Gr heterointerface transistors 35,36 , double-gate silicon-on-insulator transistors 37 , and Si junction-less transistors 38,39 . Moreover, the two peaks observed for the g m /V D curve are gradually merged (see Figure 3b), which is further broadened and extended with an increase in V D (see Figure 3c).…”

Section: Resultsmentioning

confidence: 99%

Restricted Channel Migration in 2D Multilayer ReS₂

Kim

Sung

Kim

et al. 2021

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

When thickness-dependent carrier mobility is coupled with Thomas−Fermi screening and interlayer resistance effects in two-dimensional (2D) multilayer materials, a conducting channel migrates from the bottom surface to the top surface under electrostatic bias conditions. However, various factors including (i) insufficient carrier density, (ii) atomically thin material thickness, and (iii) numerous oxide traps/defects considerably limit our deep understanding of the carrier transport mechanism in 2D multilayer materials. Herein, we report the restricted conducting channel migration in 2D multilayer ReS 2 after a constant voltage stress of gate dielectrics is applied. At a given gate bias condition, a gradual increase in the drain bias enables a sensitive change in the interlayer resistance of ReS 2 , leading to a modification of the shape of the transconductance curves, and consequently, demonstrates the conducting channel migration along the thickness of ReS 2 before the stress. Meanwhile, this distinct conduction feature disappears after stress, indicating the formation of additional oxide trap sites inside the gate dielectrics that degrade the carrier mobility and eventually restrict the channel migration. Our theoretical and experimental study based on the resistor network model and Thomas−Fermi charge screening theory provides further insights into the origins of channel migration and restriction in 2D multilayer devices.

show abstract

“…It is concluded that the body-source junction current is the major potential source of the incremental noise spectral density. Numerous researches have reported that irradiation will induce interface traps at the STI/body and BOX/body interfaces, which can act as the recombination centers [12]. On one hand the number of excess holes left in the body reduces through the recombination centers, which suppresses the second g …”

Section: Resultsmentioning

confidence: 99%

“…From results in [12], after 500 krad(Si) total dose radiation the second transconductance induced by the GIFBEs decreased. The degradation was thought to result from the interface traps and oxide traps charge, which enhanced carrier recombination.…”

Section: Introductionmentioning

confidence: 99%

Total dose radiation induced changes of the floating body effects in the partially depleted SOI NMOS with ultrathin gate oxide

Dai

Zhang

et al. 2018

IEICE Electron. Express

Self Cite

View full text Add to dashboard Cite

Abstract:In this paper, the impacts of total dose radiation on the low-frequency noise and gate induced floating body effects (GIFBEs) for the 130nm partially depleted silicon-on-insulator N-type metal-oxide semiconductors transistor with an ultrathin gate oxide have been investigated. It is shown that the second transconductance gm peak becomes smaller after irradiation when the Lorentzian-like excess noise is more pronounced. The traps induced by irradiation at shallow trench isolation/body and buried-oxide/body interface can act as the recombination centers to increase the source-body diode current, which results in the changes in the excess noise and GIFBEs.

show abstract

Total Dose Irradiation-Induced Degradation of Hysteresis Effect in Partially Depleted Silicon-on-Insulator NMOSFETs

Cited by 8 publications

References 20 publications

Transistors based on two-dimensional materials for future integrated circuits

Transistors based on two-dimensional materials for future integrated circuits

Restricted Channel Migration in 2D Multilayer ReS₂

Total dose radiation induced changes of the floating body effects in the partially depleted SOI NMOS with ultrathin gate oxide

Contact Info

Product

Resources

About

Total Dose Irradiation-Induced Degradation of Hysteresis Effect in Partially Depleted Silicon-on-Insulator NMOSFETs

Cited by 8 publications

References 20 publications

Transistors based on two-dimensional materials for future integrated circuits

Transistors based on two-dimensional materials for future integrated circuits

Restricted Channel Migration in 2D Multilayer ReS2

Total dose radiation induced changes of the floating body effects in the partially depleted SOI NMOS with ultrathin gate oxide

Contact Info

Product

Resources

About

Restricted Channel Migration in 2D Multilayer ReS₂