Investigation of unique total ionizing dose effects in 0.2µm partially-depleted silicon-on-insulator technology

Zhang, Yanwei; Huang, Huixiang; Bi, Dawei; Tang, Minghua; Zhang, ZhengXuan

doi:10.1016/j.nima.2014.01.052

Cited by 6 publications

(5 citation statements)

References 19 publications

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“…Goodpasture’s syndrome is a rare disease that is named after Dr Ernest Goodpasture who discovered this condition in 1919. The syndrome is characterised by a clinical triad of rapidly progressive glomerulonephritis, diffuse pulmonary haemorrhage and circulating anti-GBM antibody 3 4. This condition affects young adults (20–30 years of age) and is more common in men than women by a ratio of 9:1 5.…”

Section: Discussionmentioning

confidence: 99%

Goodpasture syndrome: a rare case presenting with recurrent haemoptysis

Mankuzhy Gopalakrishnan,

Raveendran,

Paulraj

et al. 2024

BMJ Case Rep

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Goodpasture syndromeis a rare autoimmune disease which affects young adults with a male preponderance and can be triggered at any point in life with a classical clinical triad of rapidly progressive glomerulonephritis, diffuse pulmonary haemorrhage and circulating anti-glomerular basement membrane antibody (anti-GBM antibody). Here we are presenting a case of a young man with hypertension in his early 20s who presented with fatigue, recurrent haemoptysis, breathlessness and decreased urine output without features of infection. He was diagnosed at an early stage of the disease with the help of clinical, serological and radiological findings. An early diagnosis with effective treatment using plasma exchange, intravenous high-dose methylprednisolone, and cyclophosphamide showed a rapid improvement in the patient’s condition with an immediate decrease in anti-GBM titres and proteinuria.

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Section: Discussionmentioning

confidence: 99%

Goodpasture syndrome: a rare case presenting with recurrent haemoptysis

Mankuzhy Gopalakrishnan,

Raveendran,

Paulraj

et al. 2024

BMJ Case Rep

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“…These are all in agreement with the previous studies. [13,16] However, at the first test, the samples from group-back show more subdued hump than the samples from group-front. As the TID increases, the hump is subdued more significantly.…”

Section: Influence On Front-gate Transfer Characteristic Curvesmentioning

confidence: 96%

“…[1,4] In many studies of TID effect, the characteristics of the front-gate transistor and the characteristics of the back-gate transistor were both analyzed. [4][5][6][7][10][11][12][13][14][15][16][17][18] Hence, both of them were all measured in experiment. In their papers, they only stated that the characteristics of the front-gate transistor and the characteristics of the back-gate transistor were measured before irradiation and after a certain total ionizing dose level.…”

Section: Introductionmentioning

confidence: 99%

Influence of characteristics’ measurement sequence on total ionizing dose effect in PDSOI nMOSFET

Xie¹,

Bi²,

Hu³

et al. 2018

Chinese Phys. B

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The influence of characteristics' measurement sequence on total ionizing dose effect in partially-depleted SOI nMOS-FET is comprehensively studied. We find that measuring the front-gate curves has no influence on total ionizing dose effect. However, the back-gate curves' measurement has a great influence on total ionizing dose effect due to high electric field in the buried oxide during measuring. In this paper, we analyze their mechanisms and we find that there are three kinds of electrons tunneling mechanisms at the bottom corner of the shallow trench isolation and in the buried oxide during the backgate curves' measurement, which are: Fowler-Nordheim tunneling, trap-assisted tunneling, and charge-assisted tunneling. The tunneling electrons neutralize the radiation-induced positive trapped charges, which weakens the total ionizing dose effect. As the total ionizing dose level increases, the charge-assisted tunneling is enhanced by the radiation-induced positive trapped charges. Hence, the influence of the back-gate curves' measurement is enhanced as the total ionizing dose level increases. Different irradiation biases are compared with each other. An appropriate measurement sequence and voltage bias are proposed to eliminate the influence of measurement.

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“…In other words, the threshold of the back gate would change with the irradiation dose. Although in practical circuits, the back gate is typically grounded, these devices conduct as the threshold of the back gate drifts below zero, leading to a large channel leakage current [10][11][12]. If this shift is large enough, the device cannot be turned off, even with zero voltage applied, and the device is suspected to have failed by entering depletion mode.…”

Section: Introductionmentioning

confidence: 99%

Recovery Effect of Hot-Carrier Stress on γ-ray-Irradiated 0.13 μm Partially Depleted SOI n-MOSFETs

Lin,

Cong,

Jia

2023

Electronics

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Many silicon-on-insulator (SOI) metal–oxide–semiconductor field-effect transistors (MOSFETs) are used in deep space detection systems because they have higher radiation resistance than bulk silicon devices. However, SOI devices have to face the double challenge of radiation and conventional reliability problems, such as hot carrier stress, at the same time. Thus, we wondered whether there is any interaction between reliability degradation and irradiation damage. In this paper, the effect of hot-carrier injection (HCI) on γ-ray-irradiated partially depleted (PD) SOI n-MOSFETs with a T-shaped gate structure is investigated. A strange phenomenon that accelerated the annealing effect on irradiation devices caused by HCI in 5 s was observed. That is, HCI has fast recovery ability on the irradiated narrow-channel n-MOSFETs. We explain the physical mechanism of this recovery effect qualitatively. Moreover, we designed a comparable experiment to evaluate the effect on the wide-channel devices. These results show that the narrow-channel devices are more sensitive to irradiation and HCI effects than wide-channel devices.

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Investigation of unique total ionizing dose effects in 0.2µm partially-depleted silicon-on-insulator technology

Cited by 6 publications

References 19 publications

Goodpasture syndrome: a rare case presenting with recurrent haemoptysis

Goodpasture syndrome: a rare case presenting with recurrent haemoptysis

Influence of characteristics’ measurement sequence on total ionizing dose effect in PDSOI nMOSFET

Recovery Effect of Hot-Carrier Stress on γ-ray-Irradiated 0.13 μm Partially Depleted SOI n-MOSFETs

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