Total-Ionizing-Dose Induced Coupling Effect in the 130-nm PDSOI I/O nMOSFETs

Total-Ionizing-Dose-Induced Body Current Lowering in the 130 nm PDSOI I/O NMOSFETs

“…Then, the decay of the lateral elec-tric field leads to the decrease of the body current. [8] In this Letter, the decrease of the body current of Tgate 130 nm PDSOI I/O NMOSFET with the increase of the irradiation dose is observed. The TCAD simulation indicates that the lateral electric field is weakened by the TID-effect-induced holes in BOX.…”

“…The original physical mechanism of the body current is the impact ionizing carriers. [1,8] The impact ionizing factor is…”

“…These charges can counteract the lateral electric field formed by the high potential of the drain to some extent. [8] That is why the lateral electric field near the drain decreases with the dose and the body current of device decays concomitantly.…”

Total-ionizing-dose induced enhanced hot-carrier injection effect in the 130 nm partially depleted SOI I/O nMOSFETs

“…7) But this is not the reason for our devices due to the radiation-induced coupling effect between the front gate and the back gate. 8) The thickness of the top silicon film is less than twice of the maximum width of depleted region due to the low doping concentrations of substrate region (N A = 2.5 × 10 17 cm −3 ). As a result, the depletion regions arising from the front and the back interfaces separately could interconnect with each other when sufficient charge is trapped in BOX.…”

Improved Model on Buried-Oxide Damage Induced by Total-Ionizing-Dose Effect for HV SOI LDMOS

“…Totalionizing-dose (TID) effect is one of the most common irradiation damages for semiconductor devices applied in space equipment [3]- [10]. For TID effect on low-voltage SOI MOSFET, the damage on buried-oxide (BOX) may lead to the increase of OFF-state leakage and coupling effect [11]- [13]. The degradation mechanism is ascribed to the positive oxide trapped charge (N ot ) induced by TID generated near the SOI/BOX interface under the positive applied field bias in the BOX (field lines perpendicular to the SOI/BOX interface pointing from the bottom to the top) [3], [6], [7], [12].…”