Total-Ionizing-Dose-Induced Body Current Lowering in the 130 nm PDSOI I/O NMOSFETs

Liu, Xiao-Nian; Dai, Lei; Ning, Bingxu; Zou, Shichang

doi:10.1088/0256-307x/34/1/016103

Cited by 7 publications

(8 citation statements)

References 8 publications

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“…According to previous studies, [1,6,16] the irradiation under ON bias induces more significant hump and higher drain leakage current, whereas the irradiation under PG bias induces the larger shift of threshold voltage, drain saturation current, and body current. What is very interesting is that the measurement-sequence-induced change of hump and drain leakage current under ON bias are larger than those under PG bias.…”

Section: Comparisons Between On Bias and Pg Biasmentioning

confidence: 80%

“…These are in accordance with the Xiao-Nian Liu et al's research results. [6] However, the samples from groupback show higher absolute body current than the samples from group-front before irradiation and after a TID level irradiation. These results reveal that the back-gate curves' measurement has influence on the front-gate body current not only after irradiation, but also before irradiation.…”

Section: Influence On Front-gate Body Currentmentioning

confidence: 94%

“…[2] The radiationinduced positive trapped charges in the STI can reduce the threshold voltage of the STI sidewall parasitic transistor and induce the hump effect on the transfer characteristic curve of the front-gate transistor. [3,4] The radiation-induced positive trapped charges in the BOX can deplete the body silicon film, and induce a lot of effects, such as body current lowering, [5,6] coupling effect, [7] drain-induced barrier lowering (DIBL), [8,9] and so on. When the radiation-induced positive trapped charges in the BOX are enough and inverse the body silicon film, the device will suffer a large leakage current from the bottom body silicon film and fail to work.…”

Section: Introductionmentioning

confidence: 99%

“…[1,4] In many studies of TID effect, the characteristics of the front-gate transistor and the characteristics of the back-gate transistor were both analyzed. [4][5][6][7][10][11][12][13][14][15][16][17][18] Hence, both of them were all measured in experiment. In their papers, they only stated that the characteristics of the front-gate transistor and the characteristics of the back-gate transistor were measured before irradiation and after a certain total ionizing dose level.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Influence of characteristics’ measurement sequence on total ionizing dose effect in PDSOI nMOSFET

Xie¹,

Bi²,

Hu³

et al. 2018

Chinese Phys. B

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The influence of characteristics' measurement sequence on total ionizing dose effect in partially-depleted SOI nMOS-FET is comprehensively studied. We find that measuring the front-gate curves has no influence on total ionizing dose effect. However, the back-gate curves' measurement has a great influence on total ionizing dose effect due to high electric field in the buried oxide during measuring. In this paper, we analyze their mechanisms and we find that there are three kinds of electrons tunneling mechanisms at the bottom corner of the shallow trench isolation and in the buried oxide during the backgate curves' measurement, which are: Fowler-Nordheim tunneling, trap-assisted tunneling, and charge-assisted tunneling. The tunneling electrons neutralize the radiation-induced positive trapped charges, which weakens the total ionizing dose effect. As the total ionizing dose level increases, the charge-assisted tunneling is enhanced by the radiation-induced positive trapped charges. Hence, the influence of the back-gate curves' measurement is enhanced as the total ionizing dose level increases. Different irradiation biases are compared with each other. An appropriate measurement sequence and voltage bias are proposed to eliminate the influence of measurement.

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Section: Comparisons Between On Bias and Pg Biasmentioning

confidence: 80%

Section: Influence On Front-gate Body Currentmentioning

confidence: 94%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Influence of characteristics’ measurement sequence on total ionizing dose effect in PDSOI nMOSFET

Xie¹,

Bi²,

Hu³

et al. 2018

Chinese Phys. B

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“…The I/O voltage of all samples is 3.3 V and their core voltage is 1.2 V. The SOI wafer used in this study is a kind of partially depleted SOI (PDSOI) with a 100nm-thick top silicon and a 145-nm-thick buried oxide (BOX), which has been applied widely. To minimize their floating body effect (FBE) and to improve their RH performance, [14] body contact was used in all SOI transistors.…”

mentioning

confidence: 99%

Influence of Tilted Angle on Effective Linear Energy Transfer in Single Event Effect Tests for Integrated Circuits at 130 nm Technology Node

Zhang¹,

Lü²,

Xu³

et al. 2017

Chinese Phys. Lett.

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A heavy-ion irradiation experiment is studied in digital storage cells with different design approaches in 130 nm CMOS bulk Si and silicon-on-insulator (SOI) technologies. The effectiveness of linear energy transfer (LET) with a tilted ion beam at the 130 nm technology node is obtained. Tests of tilted angles θ = 0°, 30° and 60° with respect to the normal direction are performed under heavy-ion Kr with certain power whose LET is about 40MeVcm2/mg at normal incidence. Error numbers in D flip-flop chains are used to determine their upset sensitivity at different incidence angles. It is indicated that the effective LETs for SOI and bulk Si are not exactly in inverse proportion to cos θ, furthermore the effective LET for SOI is more closely in inverse proportion to cos θ compared to bulk Si, which are also the well known behavior. It is interesting that, if we design the sample in the dual interlocked storage cell approach, the effective LET in bulk Si will look like inversely proportional to cos θ very well, which is also specifically explained.

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An Increase in TDDB Lifetime of Partially Depleted SOI Devices Induced by Proton Irradiation*

Ma¹,

Zheng²,

Cui³

et al. 2017

Chinese Phys. Lett.

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The effects of proton irradiation on the subsequent time-dependent dielectric breakdown (TDDB) of partially depleted SOI devices are experimentally investigated. It is demonstrated that heavy-ion irradiation will induce the decrease of TDDB lifetime for many device types, but we are amazed to find a measurable increase in the TDDB lifetime and a slight decrease in the radiation-induced leakage current after proton irradiation at the nominal operating irradiation bias. We interpret these results and mechanisms in terms of the effects of radiation-induced traps on the stressing current during the reliability testing, which may be significant to expand the understanding of the radiation effects of the devices used in the proton radiation environment.

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Total-Ionizing-Dose-Induced Body Current Lowering in the 130 nm PDSOI I/O NMOSFETs

Cited by 7 publications

References 8 publications

Influence of characteristics’ measurement sequence on total ionizing dose effect in PDSOI nMOSFET

Influence of characteristics’ measurement sequence on total ionizing dose effect in PDSOI nMOSFET

Influence of Tilted Angle on Effective Linear Energy Transfer in Single Event Effect Tests for Integrated Circuits at 130 nm Technology Node

An Increase in TDDB Lifetime of Partially Depleted SOI Devices Induced by Proton Irradiation*

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