Abstract:A heavy-ion irradiation experiment is studied in digital storage cells with different design approaches in 130 nm CMOS bulk Si and silicon-on-insulator (SOI) technologies. The effectiveness of linear energy transfer (LET) with a tilted ion beam at the 130 nm technology node is obtained. Tests of tilted angles θ = 0°, 30° and 60° with respect to the normal direction are performed under heavy-ion Kr with certain power whose LET is about 40MeVcm2/mg at normal incidence. Error numbers in D flip-flop chains are use… Show more
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