This article for the first time reports the design and performance optimization of Junctionless (JL) Bottom spacer (BSP) FinFET. Initially to get the desired value of workfunction (∅_m) and fin thickness (Tfin) for analog/RF analysis, the optimization of these parameters has been done by considering several values. It has been noticed that the increase in ∅_m and reduction in Tfin can lead to better electrical performance with suppressed short channel effects (SCE). Further, it is also observed that reduction in bottom spacer height (HBSP) can fetch enhanced analog/RF performance considering the improvement noticed in transconductance (gm), intrinsic gain (AV), transconductance generation factor (TGF), cutoff frequency (fT), and Gain frequency product (GFP). Moreover, when the bottom spacer dielectric permittivity (KBSP) is increased from 3.9 to 22, it has been found that the analog/RF performance degrades significantly.
This paper presents fractal-based inductors for industrial, scientific, and medical applications in a frequency range of 3-500 MHz. The proposed inductors are designed based on the Hilbert space-filling curve and omega-shaped space-filling curve. The fractal inductors are designed and simulated by using a full wave high frequency structural simulator. The Hilbert curve-based fractal loop inductor and omega curve-based fractal loop inductor achieve improvements in the inductance value of 21% to 31% and 11% to 30.88%, respectively, over reported standard inductors. The printed inductors are constructed on 3.2 mm RT/Duroid 5770 substrate and measured with a network analyzer (E8363B). It was found that the experimental results are almost in good agreement with the simulation results. It was also observed that the proposed fractal inductors have poor radiating power, indicating no significant electromagnetic radiation.
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