An Efficient MRTD Model for the Analysis of Crosstalk in CMOS-Driven Coupled Cu Interconnects

Nistala, Bheema Rao; Rebelli, Shashank

doi:10.13164/re.2018.0532

Cited by 9 publications

(5 citation statements)

References 17 publications

(32 reference statements)

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“…Consider N CNT interconnect lines as shown in figure 4, modeled by the following system of coupled partial differential equations (Telegrapher's equations) [12]:…”

Section: Analysi S Of Electromagnetic Coupling In Mixed Cnt Bundle Us...mentioning

confidence: 99%

“…Nevertheless, the FDTD method gives a near-accurate resolution if the following conditions are met: -The spatial increment step ∆x must be small enough relative to the wavelength to achieve good spatial resolution. -The time step ∆t must be small to ensure the CFL stability condition [12].…”

Section: Analysi S Of Electromagnetic Coupling In Mixed Cnt Bundle Us...mentioning

confidence: 99%

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Modeling and Analysis of Carbon-Nanotube Interconnections for Future Nanotechnology Interconnections between High Speed CMOS Integrated Circuits using FDTD Method

et al. 2022

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The size reduction of copper interconnects degrades their performances due to increased surface scattering, which significantly reduces the effective electron mean free path. Unlike Cu, CNTs support ballistic electron flow with a lower value of mean free, which highly induces researchers to change copper by carbon nanotubes. In this way, this paper presents an accurate method based on the finite difference method describing the behavior of carbon nanotube interconnects in the time domain. The proposed algorithm is implemented in the MATLAB tool. The crosstalk between the interconnects and the induced delays are studied as a function of their length and the technology node (45nm, 32nm, 22nm and 16nm). The values obtained by the suggested method are compared with those of the PSPICE simulation tool. A good agreement between these results is observed, which demonstrates that CNT interconnects are more efficient than copper ones in terms of crosstalk induced delays.

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“…Consider N CNT interconnect lines as shown in figure 4, modeled by the following system of coupled partial differential equations (Telegrapher's equations) [12]:…”

Section: Analysi S Of Electromagnetic Coupling In Mixed Cnt Bundle Us...mentioning

confidence: 99%

Section: Analysi S Of Electromagnetic Coupling In Mixed Cnt Bundle Us...mentioning

confidence: 99%

Modeling and Analysis of Carbon-Nanotube Interconnections for Future Nanotechnology Interconnections between High Speed CMOS Integrated Circuits using FDTD Method

et al. 2022

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“…Features and improved precision with SPICE, relative to the FDTD model. Rebelli et al [20,21] suggested the MRTD approach to evaluate the signal integrity of coupled Copper interconnect driven by linear resistive and a nonlinear CMOS dependent on the Daubechies scaling function at four extinct moments. and also, Rebelli et al [22] applied the MRTD approach driven to nonlinear CMOS using the nth-power law model to evaluate crosstalk noises in coupled on-chip interconnects.…”

mentioning

confidence: 99%

Crosstalk Noise Analysis in Coupled On-Chip Interconnects Using MRTD Technique

Gugulothu

2021

Preprint

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In this paper, the Crosstalk noise analysis of coupled on-chip interconnects have been analyzed. The multiresolution time-domain method (MRTD) is used to analyze the crosstalk noise model. The crosstalk induced propagation time delay and crosstalk peak voltage on the victim line of interconnects have been determined and compared to those of the conventional finite difference time domain (FDTD) method and validated with HSPICE simulations at the 22nm technology node. The results of the proposed method shows that crosstalk induced propagation delay in dynamic in-phase, out-phase and peak voltage timing, as well as the peak voltage value for functional crosstalk in the copper interconnects are an average error of less than 0.53% for the proposed model and HSPICE simulations. The results of the proposed model are closely similar to those of HSPICE simulations. Electromagnetic interference and electromagnetic compatibility of on-chip interconnects can also be addressed using the proposed method.

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“…Tong et al 23,24 proposed the MRTD model for transient analysis of two-conductor transmissions lines which outperformed the traditional FDTD in terms of numerical dispersion and accuracy when compared to SPICE. Rebelli et al 25,26 suggested that the MRTD approach is used to evaluate the signal integrity issues of a coupled copper interconnect driven by a linear resistive and a nonlinear CMOS dependent on the Daubechies scaling function at four extinct moments and also Rebelli et al 27 applied the MRTD approach driven to non-linear CMOS employing the nth power-law model to evaluate crosstalk noises in mutually coupled Multiwalled Carbon Nanotube interconnects. The crosstalk effects of SWCNT bundle interconnects have been investigated using the FDTD method with a resistive driver.…”

mentioning

confidence: 99%

“…The currents I p and I n are defined employing the nth-power law model. 26 Applying discretization and Galerkin technique to (14a) and (14b) respectively, then…”

mentioning

confidence: 99%

Transient Analysis of Crosstalk Noise Effects in SWCNT Bundle On-Chip Interconnects Using MRTD Technique

Gugulothu

Bhukya

2021

ECS J. Solid State Sci. Technol.

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Carbon nanotube bundles are being considered as a potential on-chip interconnect replacement for conventional copper on-chip interconnects in the nanoscale regime of recent IC technology. This paper analyzes the signal integrity analysis of CMOS gatedriven single-walled carbon nanotubes (SWCNTs) bundle on-chip interconnects. The wavelet-based numerical model Multiresolution Time Domain (MRTD) method is used for the transient analysis of SWCNTs bundles on-chip interconnects. The proposed MRTD model is used to perform transient analysis for parameters of signal integrity, peak crosstalk, and propagation delay estimations. The obtained results of the proposed MRTD model are compared with those of the conventional Finite Difference Time Domains (FDTD) model and it is validated with SPICE simulator at 32 nm technology node and also compared with multiwalled CNT (MWCNT) interconnects at 22 nm. The MRTD model results show excellent agreements to SPICE with less than 0.41% error. The elapsed CPU runtimes for the MRTD model are significantly less compared to SPICE. The MRTD model is used to interconnects the model with two and three lines and can be extended to an M-coupled line. The results of the proposed model are closely matched to those of SPICE simulations.

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An Efficient MRTD Model for the Analysis of Crosstalk in CMOS-Driven Coupled Cu Interconnects

Cited by 9 publications

References 17 publications

Modeling and Analysis of Carbon-Nanotube Interconnections for Future Nanotechnology Interconnections between High Speed CMOS Integrated Circuits using FDTD Method

Modeling and Analysis of Carbon-Nanotube Interconnections for Future Nanotechnology Interconnections between High Speed CMOS Integrated Circuits using FDTD Method

Crosstalk Noise Analysis in Coupled On-Chip Interconnects Using MRTD Technique

Transient Analysis of Crosstalk Noise Effects in SWCNT Bundle On-Chip Interconnects Using MRTD Technique

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