The analog/RF performance of a strained-Si graded-channel dual-material double-gate MOSFET with interface charges

Suddapalli, Subba Rao; Nistala, Bheema Rao

doi:10.1007/s10825-020-01578-3

Cited by 13 publications

(5 citation statements)

References 23 publications

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“…The performance analysis of proposed TMGS-GCDG-JL s-Si MOSFET is compared with existing works in the previous works, as demonstrated in Table 2. The voltage gain, f t , and GTFP of proposed TMGS-GCDG-JL s-Si MOSFET (m=0.2 and t ox2 = 1nm) are better than when compared to the GS-GCDG-JL s-Si MOS-FET (m=0.2 and t ox2 = 1nm), high-k spacer DG junctionless MOSFET [14], DG junctionless MOSFET with channel length 20 nm [19], GC DG junctionless device with channel length 30 nm [20] and strained-Si GC-DMDG MOSFET with channel length 20 nm [29]. However, the proposed TMGS-GCDG-JL s-Si MOSFET has lower early voltage than high-k spacer DG junctionless MOSFET [14].…”

Section: Results Analysismentioning

confidence: 95%

“…However, the proposed TMGS-GCDG-JL s-Si MOSFET has lower early voltage than high-k spacer DG junctionless MOSFET [14]. Moreover, the proposed TMGS-GCDG-JL s-Si MOSFET has lower g m than strained-Si GC-DMDG MOSFET with channel length 20 nm [29]. Therefore, the proposed MOSFET using the TMG with GC engineering and gate stack techniques achieves improved overall analog/RF performance.…”

Section: Results Analysismentioning

confidence: 99%

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Analog/RF Performance of Triple Material Gate Stack-Graded Channel Double Gate-Junctionless Strained-silicon MOSFET with Fixed Charges

Suddapalli¹,

Joseph²,

Chintala³

et al. 2021

Preprint

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In this paper, analog/radio frequency (RF) electrical characteristics of triple material gate stack-graded channel double gate-Junctionless (TMGS-GCDG-JL) strained-silicon (s-Si) MOSFET with fixed charges is analyzed with the help of Sentaurus TCAD. By varying the various device parameters, the analog/RF performance of the proposed TMGS-GCDG-JL s-Si MOSFET is evaluated in terms of early voltage, transconductance generation factor (TGF), voltage gain, unity current gain frequency ( ft ), unity power gain frequency (fmax ), and gain transconductance frequency product (GTFP). The results confirm that the proposed TMGS-GCDG-JL s-Si MOSFET has superior analog/RF performance compared to the gate stack-graded channel double gate-junctionless (GS-GCDG-JL) s-Si MOSFET. However, the proposed device has less transconductance and less output conductance in comparison with the GS-GCDG-JL s-Si MOSFET in strong inversion region, and reverse trend follows in sub-threshold region.

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Section: Results Analysismentioning

confidence: 95%

Section: Results Analysismentioning

confidence: 99%

Analog/RF Performance of Triple Material Gate Stack-Graded Channel Double Gate-Junctionless Strained-silicon MOSFET with Fixed Charges

Suddapalli¹,

Joseph²,

Chintala³

et al. 2021

Preprint

Self Cite

View full text Add to dashboard Cite

show abstract

“…Transconductance Frequency Product (TFP) and, Gain Transconductance Frequency Product (GTFP) also important RF parameters . 28,29 Maximizing TFP helps in optimizing the performance of amplifiers, oscillators, filters, and other circuits in various electronic systems. Additionally, GTFP provide valuable insights into the performance of MOSFET circuits, particularly in amplifier design, frequency response analysis, high-frequency applications, low-noise amplifiers, oscillator circuits, and active filters.…”

Section: Simulation Of Device and Discussionmentioning

confidence: 99%

Ferroelectric Based Low Power MOSFET for DC/RF Applications: Machine Learning Assisted Statistical Variation Analysis

Singh,

Baghel,

Tirkey

2024

ECS J. Solid State Sci. Technol.

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The analog/radio-frequency (RF) performance of a ferroelectric-based substrate metal oxide semiconductor field effect transistor (FE-MOSFET) with dielectric spacer was designed and proposed. The utilization of gate side wall spacers aims to mitigate short-channel effects (SCEs), and improve overall device performance. Simulation results demonstrate enhanced performance metrics, including improved transconductance (80%), reduced gate leakage (95.4%), and enhanced cutoff frequency (25%), making this design a promising candidate for next-generation high-performance analog and RF applications. Additionally, a novel machine learning (ML)-assisted approach is proposed for investigating the spacer-based FE-MOSFET to reduce the computational cost of numerical TCAD device simulations with the help of conventional- artificial neural network (C-ANN). This method is reported for the first-time ML-based C-ANN for Fe-based low-power MOSFET, matches the similar accuracy of physics-based TCAD with the fastest learning rate and fastest computational speed (in 95-100 seconds). An ML-based prediction replacement for physics-based TCAD is developed to save around 8-10 hours of runtime for each iteration. Because ML predictions can never be 100% accurate, it is essential to ensure approximately zero mean-square error in the final results.

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“…Figures 1 and 2, respectively, display the simulation flow and cross-section layout for n-JLSDGM device. The main substrate of this device was based on SiGe material (Ge<20%) with a thickness of 8nm, mainly opted due to its larger lattice constant than Si [30]. The ultrathin Si layer (1 nm) was then deposited on the top of the main SiGe layer, thus forming a strained Si layer.…”

Section: Device Dimension and Simulationmentioning

confidence: 99%

Work function variations on electrostatic and RF performances of JLSDGM Device

Kaharudin

Salehuddin²,

Zain³

et al. 2021

IJEECS

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This paper offers a systematic analysis on the impact of work function (WF) variations on electrostatic and radio frequency (RF) performances of nchannel junctionless strained double gate (DG) (n-JLSDGM) metal oxide semiconductor field effect transistor (MOSFET). The study has been performed under othe constant level of design parameters that operates in saturation as a transconductance amplifier, considering the dependence of electrostatic and RF performance on the variation of WF. Furthermore, this paper aims to provide physical insight into the improved electrostatic and RF performances of the proposed n-JLSDGM device. The device layout and characteristics were designed and extracted respectively via a comprehensive 2-D simulation. Device performances such as on-state current (ION), off-state current (IOFF), on-off current ratio, subthreshold swing (SS), intrinsic capacitances, dynamic power dissipation (Pdyn), cut-off frequency (fT) and maximum oscillation frequency (fmax) are intensively investigated in conjunction with WF variations.

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The analog/RF performance of a strained-Si graded-channel dual-material double-gate MOSFET with interface charges

Cited by 13 publications

References 23 publications

Analog/RF Performance of Triple Material Gate Stack-Graded Channel Double Gate-Junctionless Strained-silicon MOSFET with Fixed Charges

Analog/RF Performance of Triple Material Gate Stack-Graded Channel Double Gate-Junctionless Strained-silicon MOSFET with Fixed Charges

Ferroelectric Based Low Power MOSFET for DC/RF Applications: Machine Learning Assisted Statistical Variation Analysis

Work function variations on electrostatic and RF performances of JLSDGM Device

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