Analog/RF Performance of Triple Material Gate Stack-Graded Channel Double Gate-Junctionless Strained-silicon MOSFET with Fixed Charges

Abstract

In this paper, analog/radio frequency (RF) electrical characteristics of triple material gate stack-graded channel double gate-Junctionless (TMGS-GCDG-JL) strained-silicon (s-Si) MOSFET with fixed charges is analyzed with the help of Sentaurus TCAD. By varying the various device parameters, the analog/RF performance of the proposed TMGS-GCDG-JL s-Si MOSFET is evaluated in terms of early voltage, transconductance generation factor (TGF), voltage gain, unity current gain frequency ( ft ), unity power gain frequency (fmax ), and gain transconductance frequency product (GTFP). The results confirm that the proposed TMGS-GCDG-JL s-Si MOSFET has superior analog/RF performance compared to the gate stack-graded channel double gate-junctionless (GS-GCDG-JL) s-Si MOSFET. However, the proposed device has less transconductance and less output conductance in comparison with the GS-GCDG-JL s-Si MOSFET in strong inversion region, and reverse trend follows in sub-threshold region.