2017
DOI: 10.3906/elk-1607-190
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High inductance fractal inductors for wireless applications

Abstract: This paper presents fractal-based inductors for industrial, scientific, and medical applications in a frequency range of 3-500 MHz. The proposed inductors are designed based on the Hilbert space-filling curve and omega-shaped space-filling curve. The fractal inductors are designed and simulated by using a full wave high frequency structural simulator. The Hilbert curve-based fractal loop inductor and omega curve-based fractal loop inductor achieve improvements in the inductance value of 21% to 31% and 11% to 3… Show more

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Cited by 6 publications
(5 citation statements)
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“…Type/model Average run time (s) Lower order fractal inductor EM Simulation 1800 Higher order fractal inductor EM Simulation 6000 Fractal loop inductor [3] EM Simulation 2200 Series stacked fractal inductor [4] EM Simulation 8900 Proposed work FNNPSOGSA 44…”
Section: Inductor Typementioning
confidence: 99%
See 1 more Smart Citation
“…Type/model Average run time (s) Lower order fractal inductor EM Simulation 1800 Higher order fractal inductor EM Simulation 6000 Fractal loop inductor [3] EM Simulation 2200 Series stacked fractal inductor [4] EM Simulation 8900 Proposed work FNNPSOGSA 44…”
Section: Inductor Typementioning
confidence: 99%
“…An exhaustive study of conventional fractal inductors was carried out in [1,2]. The modified fractal inductors are proposed in single and multilayer processes to achieve higher L and Q values [3,4]. These fractal inductors are designed using an EM simulator, which gives accurate results but is time-consuming.…”
Section: Introductionmentioning
confidence: 99%
“…Despite high performance, the spiral inductors are unable to achieve higher inductance for the miniaturized on-chip area (Kuhn and Ibrahim, 2001). This problem is solved using fractal curves in the implementation of the inductor (Lazarus et al , 2014; Padavala and Nistala, 2017; Maric et al , 2008). The space-filling property of the fractal curves results in longer conductive segments that leads to high inductance density while occupying the equal on-chip area (Sagan, 2012).…”
Section: Introductionmentioning
confidence: 99%
“…In contrast, conventional planar inductors require a large on-chip area to achieve high inductance values. Fractal geometry-based inductors act as a feasible solution to achieve higher inductance due to longer trace lengths [2][3][4]. The conventional series stacked fractal inductor (CSSFI) improves the inductance and self-resonance frequency ( f SR ) and reduces the quality factor (Q) [5][6][7].…”
Section: Introductionmentioning
confidence: 99%