In this paper we present an evaluation of the pulsed laser as a technique for single events effects (SEE) testing. We explore in detail the important optical effects, such as laser beam propagation, surface reflection, and linear and nonlinear absorption, which determine the nature of lasergenerated charge tracks in semiconductor materials. While there are differences in the structure of laser-and iongenerated charge tracks, we show that in many cases the pulsed laser remains an invaluable tool for SEE testing. Indeed, for several SEE applications, we show that the pulsed laser method represents a more practical approach than conventional accelerator-based methods.

This attempt at circuit level single event effects (SEE) hardening of SiGe HBT logic provides the first reported indication of the level of sensitivity in this important technology. Characterization over data rate up to 3 Gbps and over a broad range of heavy ion LET's provides important clues to upset mechanisms and implications for upset rate predictions. We augment ion test data with pulsed laser SEE testing to indicate the sensitive targets within the circuit and to provide insights into the upset mechanism(s).

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SEUs in the CRRES MEP showed a dramatic increase during a solar flare, the influence of the flare varied widely among device types, and a GaAs RAM showed a different response to the proton belts than some Si RAMS. Corrections to the SEU rate to account for orbital dwell time emphasize the dramatic difference between the rate in the proton belts and the rate due to cosmic ray ions above the belts. In the case of one device, apparent total dose damage resulted in a large increase in upsets due to unreliable device operation.

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