Charge collection in silicon for ions of different energy but same linear energy transfer (LET)

Bevalac ion beam characterizations for single event phenomena

“…In contrast, the ATLAS charge collection study [4], which compared ions of the same species but different energies, produced the opposite results, with higher energy ions resulting in greater charge collection than lower energy ions of the same LET.…”

“…On the other hand, higher LET contaminants tend to raise the calculated cross section above the true value. We believe that some of the rather unusual observations described in References [1][2][3][4], and emphasized in the previous section, may be due, at least in part, to impurities in the ion beams. However, a detailed analysis of the precise effects of beam impurities in these studies is not possible based solely upon the limited information provided in the literature.…”

“…A detailed study of charge collection, employing high energy ions produced at the Argon National Laboratory ATLAS facility, was published in 1988 [4]. in this study, the charge collection resulting from ions of the same species and LET, but different energies, were compared.…”

“…The Lawrence Berkeley Laboratory (LBL) Bevalac has been used to characterize the susceptibility of microcircuits to ions in space [1][2][3][4]. This susceptibility is usually measured in terms of such phenomena as single-event latchup (SEL), single-event upset (SEU), and single-event burnout (SEB).…”

“…The high energy ion beams at Bevalac and ATLAS were not directly measured for purity during the experiments described in [1][2][3][4]. A beam-averaged LET study using 670 MeV/amu Ne ions was included in [2]; however, such studies may not reveal the possible existence of small amounts of beam contaminants.…”