Calculations of electron inelastic mean free paths and stopping powers for several alkali halides (KF, KCl, KBr, and KI) and metal oxides (BeO, MgO, SiOZ, and A1203) have been performed in the 50 eV to 10 keV energy range. The complex dielectric formalism, improved to include the energy gap, was used for estimating the valence part of the transport characteristics, whereas the part related to electron-core interactions was evaluated according to Gryzinski's theory. An extended comparison of these calculations with the available experimental data as well as with other theoretical predictions is presented. Trends of the energy dependence of the inelastic mean free path and stopping power in alkali halides are studied. The role of the plasmon deexcitation process as a source for low-energy electrons in secondary electron emission spectra is discussed. The presented data can be used in Monte-Carlo simulations of electron transport in the considered materials.

Calculations of inelastic mean free paths, stopping powers, and continuous slowing down ranges for ten solid organic materials: polyethylene, guanine, poly(2-vinylpyridine), diphenyl-hexatriene, carotene, polystyrene, polymethyl(methacrylate), paraffin, polybudene sulfone, polyacetylene and water have been performed for electrons in the 20 eV–10 keV energy range. The complex dielectric formalism was used for estimating the valence part of the transport characteristics, whereas part of the electron–core interactions was evaluated using the binary encounter approximation. The calculations have been extended to account the exchange effect. Detailed comparison of the calculated data with available experimental and theoretical results is presented. The calculated mean ionization potentials for all considered materials were found in good agreement with the ICRU-37 data. Trends of the energy dependence of the inelastic mean free paths, stopping powers, and ranges are discussed. It was shown that Bethe’s nonrelativistic stopping power theory within an accuracy of 10% can be applied to these materials far below 10 keV. The presented data constitute a data base for Monte Carlo simulation of electron transport in organic materials, having a wide field of applications in microdosimetry, electron lithography, and others.

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We present results of systematic Monte Carlo calculations of electron transport in silicon for the wide energy range of 0.02–200 keV, obtained in the frame of a single model using verified input data. The results include characteristics of electron transport, such as backscattering coefficients, ranges, transmission, and deposited-energy distributions, which are quantities of importance for electron-beam applications. The calculations of the spatial and temporal evolution of the electron-initiated cascades of secondary electrons yield a better understanding of the electron and ion track structures and related effects in silicon.

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