In this paper we present an evaluation of the pulsed laser as a technique for single events effects (SEE) testing. We explore in detail the important optical effects, such as laser beam propagation, surface reflection, and linear and nonlinear absorption, which determine the nature of lasergenerated charge tracks in semiconductor materials. While there are differences in the structure of laser-and iongenerated charge tracks, we show that in many cases the pulsed laser remains an invaluable tool for SEE testing. Indeed, for several SEE applications, we show that the pulsed laser method represents a more practical approach than conventional accelerator-based methods.
A practical approach to the problem of ion track radial energy distribution has been developed in a computer calculation. This approach uses an existing theory that analytically describes the spatial energy deposition by delta rays. The results agree favorably with a Monte Carlo calculation that is more realistic but much less practical. Several cases of incident ions in silicon have been calculated and results presented. The information is useful as input to problems requiring initial track structure for charge transport in semiconductor applications.
This paper describes a complete simulation approach to investigating the physics of heayy-ion charge generation and collection during a single event transient in a PN diode. The simulations explore the effects of Werent ion track models, applied biases, background dopings, and LET on the transient responses of a PN diode. The simulation results show that ion track structure and charge collection via diffusiondominated processes play important roles in determining device transient responses. The simulations show no evidence of rapid charge collection in excess of that deposited in the device depletion region in typical funneling time frames (i.e., by time to peak current or in less than 500 ps). Further, the simulations clearly show that the device transient responses are not simple functions of the ion's incident LET. The simulation results imply that future studies and experiments should consider the effects of ion track structure in addition to LET and extend transient charge collection times tb insure that reported charge collection efficiencies include diffusiondominated collection processes.
Electron scattering cross section measurements on S have been made at incident electron energies between 34 and 74 MeV and at scattering angles of 162. 4' and 180 . Form factors were deduced for transitions to states at 8.11, 9.68, 10.05, 10.78, 11.12, and 11. 63 MeV. Additional peaks at 7.12, 12.02, and 13.36 MeV were observed in some spectra. Comparisons of cross sections at different angles show that the above six transitions are transverse. Comparison of the experimental form factors with those calculated using an oscillator shell model indicate that the 8.11, 9.68, 11.12, and 11. 63 MeV transitions are M1. Transition probabilities 8 (M 1)f = 1.14+0.18, 0.69+0.20, 2.40+0.22, and 1.26+0.20 po, respectively, were determined for these four transitions. The M1 form factors and transition probabilities are also compared with other theoretical shell model calculations. The transition at 10.78 MeV is probably M2, or a mixture of M2 and transverse E2 transitions to unresolved states at about that energy.
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