Calibrated charged particle radiation system with precision dosimetric measurement and control

especially well suited for orbital applications, The results of the first orbital fiber transmission experiments aboard the We report energydependent proton and Cod0 test LDEF satellite have recently been reported [l]. Also, NASA results and analysis assessing performance of In,,,Gao,,As has space qualified the MIL-STD-1773 1 megabit per second photodetectors and In,, ,,Ga, BAso 6,Po 39 laser diodes for WPS) fiber based data bus [21 which is designed P r i m l y satellite applications. Displacement damage degradation in for telemetry and control applications. Radiation tests have calculations of the nonionizing energy loss (NIEL) for m~s f u l l y on board *e solar malou lo us and technique for evaluating displacement damage in orbit. For the first time, data are presented confirming the proton energy dependence of NIEL in a 111-V material over the effects in optmlectronic devices due to total dose and ionization transients. the Inphotdemor is interpreted using DLTS. New been reported on this system 131, and it is menfly operating protons in Inallow damage assessment using a general Magnetosphefic Particle Explorer ( S M E W satellite launched On "y 1992. Past emphasis on radiation effects in optoelectronic environments with displacement damage from neutrons and photocurrent transients being key concerns. Several studies [4-71 have addressed these effects in GaAs LED sources andSi and GaAs photodetectors for application at the 850 nm wavelength. Some attention has also been given to injection laser diode response at that same wavelength, but the LED was emphasized in those studies due to its simplicity and superior reliability.energy range of interest for spacecraft. we also discuss devices have focused on survivability in weapo~ls

Section: Proton and Co40 Test Resultssupporting

confidence: 60%

Space radiation effects on optoelectronic materials and components for a 1300 nm fiber optic data bus

Marshall

Dale

Burke

1992

“…Beam currents from about 5 pA to 50 nA allow testing with proton fluxes from to protons/cm sec. The dosimetry system has been previously described [8], [9] and is accurate to about 10%. For reference, the total ionizing dose corresponding to a fluence of p/cm of 63 MeV protons is 136 krad(Si).…”

Section: Methodsmentioning

confidence: 99%

The effects of proton irradiation on the lateral and vertical scaling of UHV/CVD SiGe HBT BiCMOS technology

Cresslex

Hamilton²,

Mullinax³

et al. 2000

We present the first experimental results of the effects of 63 MeV proton irradiation on both the lateral and vertical scaling properties of SiGe HBT BiCMOS technology. Three distinct generations of (unhardened) SiGe technology are examined. The first generation SiGe HBTs experience very minor degradation in current gain at proton fluence as high as 2 10 13 p/cm 2 . The second and third generations SiGe HBTs, however, show 60-70% degradation in current gain under similar conditions, suggesting that emitter-base spacer optimization may be required as the technology is scaled. Si nFETs from the first generation SiGe BiCMOS technology are only hard to about 40 krad equivalent gamma dose, and are limited by drain-to-source leakage along the shallow trench edge. The second generation Si nFETs, however, improve with scaling since the shallow trench is thinned, and can withstand up to 150 krad of equivalent dose.

“…Beam currents from about 5 pA to 50 nA allow testing with proton fluxes from to . The dosimetry system has been previously described [3], [4] and is accurate to about 10%. At a proton fluence of 1 , the measured equivalent gamma dose was approximately 136 krad(Si).…”

Section: Methodsmentioning

confidence: 99%

Proton tolerance of multiple-threshold voltage and multiple-breakdown voltage CMOS device design points in a 0.18 /spl mu/m system-on-a-chip CMOS technology

Cressler²,

Lei³

et al. 2003

The paper presents the results of an investigation of the proton tolerance of the multiple-threshold voltage and multiple-breakdown voltage device design points contained in a 0.18 m system-on-a-chip CMOS technology. The radiation response of the CMOS devices having three different device design configurations are characterized and compared for equivalent gamma doses up to 300 krad(Si), using the threshold voltage, off-state leakage, and effective mobility to assess the dc performance. All three CMOS device configurations show a very slight degradation of threshold voltage and effective mobility with increasing dose. We also present for the first time the frequency response and S-parameters of these RF CMOS devices under proton radiation. The S-parameters and cut-off frequency show little degradation up to 300 krad(Si) total dose. These results suggest that the CMOS devices in this 0.18 m SoC CMOS technology are well-suited for RF circuit applications in an ionizing radiation environment without intentional total-dose hardening.