The effects of proton irradiation on the lateral and vertical scaling of UHV/CVD SiGe HBT BiCMOS technology

Abstract

We present the first experimental results of the effects of 63 MeV proton irradiation on both the lateral and vertical scaling properties of SiGe HBT BiCMOS technology. Three distinct generations of (unhardened) SiGe technology are examined. The first generation SiGe HBTs experience very minor degradation in current gain at proton fluence as high as 2 10 13 p/cm 2 . The second and third generations SiGe HBTs, however, show 60-70% degradation in current gain under similar conditions, suggesting that emitter-base spacer optimization may be required as the technology is scaled. Si nFETs from the first generation SiGe BiCMOS technology are only hard to about 40 krad equivalent gamma dose, and are limited by drain-to-source leakage along the shallow trench edge. The second generation Si nFETs, however, improve with scaling since the shallow trench is thinned, and can withstand up to 150 krad of equivalent dose.

Proton response of low-frequency noise in 0.20 μm 90 GHz f/sub T/ UHV/CVD SiGe HBTs

“…As can be seen, the noise increase after 2 × 10 13 p/cm 2 is larger in 7HP than in 5HP (by 1.6×), and thus 7HP is less radiation tolerant than 5HP in terms of noise. This is consistent with changes to the DC characteristics of the devices [8] and hence the technology itself.…”

EXPERIMENTAL CHARACTERIZATION OF PROTON RADIATED SiGe POWER HBTs AT EXTREME TEMPERATURES

“…The results are consistent with previous measurement with SiGe power HBTs and low-power, high-speed devices. 12,13,16 The excess base leakage current is mainly because, the proton radiation induces G/R trap centers to the SiGe HBTs as concluded in previous studies. 12,13 The radiation damage mechanism applies to high-power SiGe HBTs in Ref.…”

“…12,13,16 The excess base leakage current is mainly because, the proton radiation induces G/R trap centers to the SiGe HBTs as concluded in previous studies. 12,13 The radiation damage mechanism applies to high-power SiGe HBTs in Ref. 16 and the device in this work as well.…”

“…[5][6][7][8][9][10] The inherent radiation tolerance characteristics as well as the low-cost of SiGe HBTs make them a suitable candidate for space or other extreme environment applications even without any intentional radiation hardening. [9][10][11][12][13] Research has been done on the detailed damage mechanisms of low-power, high-speed SiGe HBTs under proton irradiation. 11,12 In addition to the low-power, high-speed devices, large emitter area SiGe power HBTs are essential for delivering the RF signal to antennas in wireless communication systems.…”

“…[9][10][11][12][13] Research has been done on the detailed damage mechanisms of low-power, high-speed SiGe HBTs under proton irradiation. 11,12 In addition to the low-power, high-speed devices, large emitter area SiGe power HBTs are essential for delivering the RF signal to antennas in wireless communication systems. Therefore, the SiGe power HBTs are employed as the core active components of power ampli¯ers.…”