Proton response of low-frequency noise in 0.20 μm 90 GHz f/sub T/ UHV/CVD SiGe HBTs

Abstract

The influence of proton exposure on the low-frequency noise of 0.20 µm UHV/CVD SiGe HBTs is presented for the first time. The noise degradation after irradiation shows a strong dependence on transistor geometry. Our previous noise theory is used to understand this behavior, and a comparison is made between these new results on third generation SiGe technology and our prior results on first generation SiGe technology. 127 0-7803-7544-0/02/$17.00 © 2002 IEEE