Space radiation effects on optoelectronic materials and components for a 1300 nm fiber optic data bus

Abstract

especially well suited for orbital applications, The results of the first orbital fiber transmission experiments aboard the We report energydependent proton and Cod0 test LDEF satellite have recently been reported [l]. Also, NASA results and analysis assessing performance of In,,,Gao,,As has space qualified the MIL-STD-1773 1 megabit per second photodetectors and In,, ,,Ga, BAso 6,Po 39 laser diodes for WPS) fiber based data bus [21 which is designed P r i m l y satellite applications. Displacement damage degradation in for telemetry and control applications. Radiation tests have calculations of the nonionizing energy loss (NIEL) for m~s f u l l y on board *e solar malou lo us and technique for evaluating displacement damage in orbit. For the first time, data are presented confirming the proton energy dependence of NIEL in a 111-V material over the effects in optmlectronic devices due to total dose and ionization transients. the Inphotdemor is interpreted using DLTS. New been reported on this system 131, and it is menfly operating protons in Inallow damage assessment using a general Magnetosphefic Particle Explorer ( S M E W satellite launched On "y 1992. Past emphasis on radiation effects in optoelectronic environments with displacement damage from neutrons and photocurrent transients being key concerns. Several studies [4-71 have addressed these effects in GaAs LED sources andSi and GaAs photodetectors for application at the 850 nm wavelength. Some attention has also been given to injection laser diode response at that same wavelength, but the LED was emphasized in those studies due to its simplicity and superior reliability.energy range of interest for spacecraft. we also discuss devices have focused on survivability in weapo~ls

Radiation damage and annealing in 1310-nm InGaAsP/InP lasers for the CMS tracker

“…There were no components included in the package, such as lenses, that could be degraded by ionization damage [14]. The initial laser threshold currents were 8-13mA and the output efficiencies (out of the fibre) were 30-70µW/mA at 20°C.…”

“…In this paper the method is only outlined briefly and we consider just the worst-case damage. This occurs for lasers situated at a radius of 22cm from the beam axis, where during the first 10 years of LHC operation the radiation fluence is expected to be 1.8x10 14 /cm 2 high energy hadrons (mainly pions with energies between 50-1000MeV, peaked close to 300MeV). For the prediction we will assume that the damage from the full spectrum of pions is the same as that caused by the same fluence of 330MeV pions.…”

“…There is some decrease in the rate of damage with increasing fluence, which is a typical effect of annealing taking place during the irradiation period. Our previous comparisons between the damage from different sources have been made based on a 96 hour irradiation period and a total particle fluence of 5x10 14 /cm 2 [8]. The new data therefore have to be normalized to this lower fluence, whilst also taking into account the extra annealing that would occur during the longer irradiation period.…”

In-flight proton-induced radiation damage to SCIAMACHY’s extended-wavelength InGaAs near-infrared detectors

“…Some information is available on radiation-induced degradation in lattice-matched InGaAs photodetectors and its effect on device operation [4][5][6][7][8][9]. The work by Barde et al.…”

Degradation and recovery of In/sub 0.53/Ga/sub 0.47/As photodiodes by 1-MeV fast neutrons

“…Marshall et al studied the degradation of InGaAs diode by proton irradiation[17]. In thls paper, NIEL and damage factor of dark current are reported.…”