Abstract-The study of the TID response of transistors and isolation test structures in a 130 nm commercial CMOS technology has demonstrated its increased radiation tolerance with respect to older technology nodes. While the thin gate oxide of the transistors is extremely tolerant to dose, charge trapping at the edge of the transistor still leads to leakage currents and, for the narrow channel transistors, to significant threshold voltage shift-an effect that we call Radiation Induced Narrow Channel Effect (RINCE).
Optical links are being developed to transfer analogue tracking data and digital timing and control signals in the future Compact Muon Solenoid (CMS) experiment at CERN. The radiation environment inside the CMS tracker will be extreme, with hadron fluences up to -10i4/cm2 and ionising doses of -100kGy over the experimental lifetime. Prototype link elements, consisting of commercially available 13 lOnm multi-quantum-well InGaAsP lasers and InGaAs p-i-n photodiodes, have been irradiated in a fully packaged form with -6MeV neutrons to 10'5n/~m2, 24GeV protons to 4x10i4p/cm2 and '"Co-gammas to 100kGy. Three types of single-mode optical fiber, two pure-silica core and one Gedoped core, were irradiated in several stages with 6oCo-gammas to a total dose of -90kGy.Neutron and proton damage induced large increases in laser threshold and significant decreases in light output efficiency. P-i-n leakage current increased by up to 6-7 orders of magnitude for neutron and proton damage. P-i-n response was relatively unaffected until -2x 10'4n/cm2, or -4~1 0~~p / c m~, after which the photocurrent decreased rapidly. Gamma damage after lOOkGy was minor in comparison to hadron damage in both the lasers and p-i-n photodiodes. The radiation induced attenuation at 1300nm in the optical fibers was dependent upon the fiber type, with losses of O.OBdB/m for the pure-silica core fiber and 0.12dBIm in the Ge-doped core fiber, after -90kGy. The annealing in one of the pure-silica core fibers was found to be temporary in nature.
Radiation damage in 1310nm InGaAsP/InP multi-quantum-well lasers caused by 0.8MeV neutrons is compared with the damage from other radiation sources, in terms of the increase in laser threshold current. The annealing behavior is then presented both in terms of both temperature and forward-bias current dependence. The annealing can be described by a model where radiation induced defects have a uniform distribution of activation energies for annealing. This model can then be used to predict the long-term damage expected for lasers operating inside the CMS tracker.
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