The effects of radiation on MEMS accelerometers

Knudson, A.R.; Buchner, S.; McDonald, P.T.; Stapor, W.J.; Campbell, A.B.; Grabowski, K. S.; Knies, D. L.; Lewis, S.; Zhao, Yong

doi:10.1109/23.556914

Cited by 65 publications

(40 citation statements)

References 2 publications

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“…Os mecanismos do acúmulo de cargas nas camadas de materiais dielétricos de dispositivos MEMS devido à radiação têm sido o foco de várias pesquisas [15,16]. Isto porque, assim como nos circuitos integrados, camadas de óxidos ou nitretos (geralmente SiO 2 ou Si 3 N 4 ) são usadas na microfabricação dos dispositivos e, após os processos, não são totalmente removidos para que atuem como isolante elétrico.…”

Section: Figuraunclassified

“…Nota-se que embora a radiação modifique algumas propriedades do silício grande parte do efeito da radiação sobre os dispositivos MEMS está associada à influência do acúmulo de cargas no dielétrico sobre o mecanismo de atuação. Os mecanismos piezo (piezoelétrico e piezoresistivo) são os princípios mais empregados no desenvolvimento de sensores MEMS para ambientes sujeitos a radiação porque são menos sensíveis que o capacitivo [15].…”

Section: Figuraunclassified

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Carbeto de Silício como Material Base para Sensores MEMS de Uso Aeroespacial: Uma Visão Geral

et al. 2014

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RESUMOEste artigo discute o emprego do carbeto de silício (SiC), na forma de substrato e filme fino, em sensores MEMS (MicroElectro-Mechanical Systems) para aplicações em ambientes sujeitos a condições extremas, especialmente no setor aeroespacial. As propriedades físicas e químicas do SiC que o tornam um material adequado para dispositivos eletrônicos e sensores são descritas. Os conceitos, evolução e aplicações da tecnologia MEMS são apresentados. Uma visão geral sobre o estágio atual de desenvolvimento de sensores MEMS baseados em SiC e uma análise das pesquisas realizadas nesta área no exterior e no Brasil, tanto nas universidades quanto nas indústrias, são também apresentad as. Os recentes avanços alcançados, as dificuldades encontradas e o impacto dessas pesquisas são discutidos, bem como as perspectivas para um futuro próximo.Palavras-chave: carbeto de silício, materiais semicondutores, micro-sensores, aplicações aeroespaciais. ABSTRACTThis paper discusses the use of silicon carbide (SiC), in bulk and thin-film form, in MEMS (Micro-Electro-Mechanical Systems) sensors for extreme environment applications, especially in aerospace. The physical and chemical properties of SiC that make it a suitable material for electronic devices and sensors are described. Concepts, developments and applications of MEMS technology are presented. An overview of the current stage of development of SiC-based MEMS sensors and an analysis of research conducted in this area in Brazil and abroad, both in universities and industries are also presented. The recent progress made, difficulties encountered and the impact of these investigations are discussed as well as the outlook for the near future.

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Section: Figuraunclassified

Carbeto de Silício como Material Base para Sensores MEMS de Uso Aeroespacial: Uma Visão Geral

et al. 2014

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“…If the MEMS devices are designed to operate in an ionizing (nuclear) radiation environment, such as outer space or a nuclear power plant, the possibility of charge accumulation due to radiation in the dielectrics should be taken into account. Knudson and Lee [103], [104] tested the performance of MEMS accelerometers under nuclear radiation and found that the change in output voltage was caused by charge buildup in dielectric layers beneath the moving mass. McClure [105] proposed a mechanism for creating a charge distribution in the dielectric of the MEMS device exposed to nuclear radiation.…”

Section: B Dielectric Breakdown Due To Electrostatic Dischargementioning

confidence: 99%

MEMS Reliability Review

Huang

Vasan

Doraiswami

et al. 2012

IEEE Trans. Device Mater. Relib.

153

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Abstract-Microelectromechanical systems (MEMS) represents a technology that integrates miniaturized mechanical and electromechanical components (i.e., sensors and actuators) that are made using microfabrication techniques. MEMS devices have become an essential component in a wide range of applications, ranging from medical and military to consumer electronics. As MEMS technology is implemented in a growing range of areas, the reliability of MEMS devices is a concern. Understanding the failure mechanisms is a prerequisite for quantifying and improving the reliability of MEMS devices. This paper reviews the common failure mechanisms in MEMS, including mechanical fracture, fatigue, creep, stiction, wear, electrical short and open, contamination, their effects on devices' performance, inspection techniques, and approaches to mitigate those failures through structure optimization and material selection.

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“…For similar devices where a conducting polysilicon film was placed over the dielectric ͑ADXL 04͒, thus effectively electrically shielding any trapped charge from the active device, no radiationinduced degradation was observed up to a dose of 3 Mrad. 41 The XMMAS40G accelerometer from Motorola tested by Lee et al 33 failed after only 4 krad. It is proposed that the failure is due to failure of the CMOS output circuitry rather than the sensor element.…”

Section: Electrostatic Microelectromechanical System Sensors and Actumentioning

confidence: 99%

“…33,41,42 The devices operate by sensing the change in capacitance as a suspended proof mass moves in response to external accelerations. It is thus very sensitive to any static charge in exposed dielectrics, and Knudson et al 41 showed the radiation-induced output voltage shift was due to charging of a dielectric under the proof mass. The devices tested under high energy proton and gamma rays show degradation in the 50-krad range ͑ADXL 50 and ADXL 150͒.…”

Section: Electrostatic Microelectromechanical System Sensors and Actumentioning

confidence: 99%

Radiation sensitivity of microelectromechanical system devices

Shea

2009

J. Micro/Nanolith. MEMS MOEMS

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Abstract. The sensitivity of microelectromechanical system ͑MEMS͒ devices to radiation is reviewed, with an emphasis on radiation levels representative of space missions rather than of operation in nuclear reactors. As a purely structural material, silicon has shown no mechanical degradation after radiation doses in excess of 100 Mrad. MEMS devices, even when excluding control/readout electronics, have, however, failed at doses of only 20 krad, though some devices have been shown to operate correctly for doses greater than 10 Mrad. Radiation sensitivity depends strongly on the sensing or actuation principle, device design, and materials, and is linked primarily to the impact on device operation of radiation-induced trapped charge in dielectrics. MEMS devices operating on electrostatic principles can be highly sensitive to charge accumulation in dielectric layers, especially for designs with dielectrics located between moving parts. In contrast, thermally and electromagnetically actuated MEMS are much more radiation tolerant. MEMS operating on piezoresitive principles start to slowly degrade at low doses, but do not fail catastrophically until doses of several Mrad. A survey of all published reports of radiation effects on MEMS is presented, as well as a summary of techniques that can improve their radiation tolerance.

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The effects of radiation on MEMS accelerometers

Cited by 65 publications

References 2 publications

Carbeto de Silício como Material Base para Sensores MEMS de Uso Aeroespacial: Uma Visão Geral

Carbeto de Silício como Material Base para Sensores MEMS de Uso Aeroespacial: Uma Visão Geral

MEMS Reliability Review

Radiation sensitivity of microelectromechanical system devices

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