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Single-Event Gate-Rupture (SEGR) in Vertical Double Diffused Metal-Oxide Semiconductor (VDMOS) power transistors exposed to a given heavy ion LET occurs at a critical gate bias that depends on the applied drain bias. A method of predicting the critical gate bias for nonzero drain biases is presented. The method requires as input the critical gate bias vs. LET for V DS = 0V. The method also predicts SEGR sensitivity to improve for larger gate-oxide thicknesses. All predictions show agreement with experimental test data.