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Heavy-ion induced single-event burnout (SEB) is investigated in high-voltage silicon carbide power MOSFETs. Experimental data for 1200 V SiC power MOSFETs show a significant decrease in SEB onset voltage for particle LETs greater than 10 MeV-cm 2 /mg, above which the SEB threshold voltage is nearly constant at half of the rated maximum operating voltage for these devices. TCAD simulations show a parasitic BJT turn-on mechanism, which drives the avalanching of carriers and leads to runaway drain current, resulting in SEB.

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Heavy ion data suggest that a common mechanism is responsible for single-event burnout in 1200 V power MOSFETs and junction barrier Schottky diodes. Similarly, heavy ion data suggest a common mechanism is also responsible for leakage current degradation in both devices. This mechanism, based on ion-induced, highlylocalized energy pulses, is demonstrated in simulations and shown to be capable of causing degradation and singleevent burnout for both the MOSFETs and JBS diodes.

Ion-induced degradation and catastrophic failures in high-voltage SiC Junction Barrier Schottky (JBS) power diodes are investigated. Experimental results agree with earlier data showing discrete jumps in leakage current for individual ions, and show that the boundary between leakage current degradation and a single-event-burnout-like effect is a strong function of LET and reverse bias. TCAD simulations show high localized electric fields under the Schottky junction, and high temperatures generated directly under the Schottky contact, consistent with the hypothesis that the ion energy causes eutectic-like intermixture at the metal-semiconductor interface or localized melting of the silicon carbide lattice.Index Terms-Single event effects, heavy ions, silicon carbide, power diodes, junction barrier schottky (JBS) diode, single-event burnout, thermal coefficients of silicon carbide.

Abstract--Generally good agreement was obtained between the single-event output voltage transient waveforms obtained by exposing individual circuit elements of a bipolar comparator and operational amplifier to an ion microbeam, a pulsed laser beam, and circuit simulations using SPICE. The agreement was achieved by adjusting the amounts of charge deposited by the laser or injected in the SPICE simulations. The implications for radiation hardness assurance are discussed.

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