Effect of ion energy upon dielectric breakdown of the capacitor response in vertical power MOSFETs

Titus, J.L.; Wheatley, C.F.; Tyne, K.M. van; Krieg, J.F.; Burton, D.I.; Campbell, A.B.

doi:10.1109/23.736490

Cited by 67 publications

(19 citation statements)

References 17 publications

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“…Past studies have suggested that the ion atomic number may play a role in SEGR susceptibility, beyond simply the ion LET or total charge ionization [3,8]. To our knowledge, this study is the first to control for the charge ionization in the silicon epilayer in order to examine the impact on SEGR of different ion species.…”

Section: Discussionmentioning

confidence: 99%

“…To better understand these data, we also validated the Titus-Wheatley formula [3], V s crit = (10 7 )(t ox )/(1+ Z/44), finding the critical Vgs for SEGR with Vds fixed at 0 V (Fig. 6).…”

Section: Resultsmentioning

confidence: 99%

“…In addition, two ion beams are chosen such that the ion with lower atomic number ionizes on average slightly more charge throughout the epilayer and a substantial portion of the substrate than does the ion with higher atomic number. Conclusions are drawn from analysis of the ion beam species and energy deposition profiles as a function of the threshold Vds determined for the given ion beam, and from expected behavior based upon the Titus-Wheatley formula [3], which is validated for the power MOSFET used in this work.…”

Section: Introductionmentioning

confidence: 99%

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Effects of Ion Atomic Number on Single-Event Gate Rupture (SEGR) Susceptibility of Power MOSFETs

Lauenstein¹,

Goldsman

Liu³

et al. 2011

IEEE Trans. Nucl. Sci.

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Section: Discussionmentioning

confidence: 99%

“…To better understand these data, we also validated the Titus-Wheatley formula [3], V s crit = (10 7 )(t ox )/(1+ Z/44), finding the critical Vgs for SEGR with Vds fixed at 0 V (Fig. 6).…”

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Effects of Ion Atomic Number on Single-Event Gate Rupture (SEGR) Susceptibility of Power MOSFETs

Lauenstein¹,

Goldsman

Liu³

et al. 2011

IEEE Trans. Nucl. Sci.

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“…It has been recently shown that ionizing radiation can produce leakage currents across thin gate oxides with electrical characteristics similar to those found after electrical stresses [3]- [8]. The first observations concerned the catastrophic single-event gate rupture (SEGR), already observed on relatively thick oxides irradiated under high oxide fields [9]- [11]. Then, the radiation-induced leakage current (RILC) was reported for oxides in the range 4-8 nm [3], [4], [12], [13].…”

Section: Introductionmentioning

confidence: 97%

Noise characteristics of radiation-induced soft breakdown current in ultrathin gate oxides

Cester¹,

Bandiera

Ceschia

et al. 2001

IEEE Trans. Nucl. Sci.

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We have investigated new aspects of the gate leakage current due to radiation-induced soft breakdown (RSB) of thin oxides subjected to heavy-ion irradiation. Temperature and noise characteristics of RSB on MOS capacitors with 3-and 4-nm MOS oxides have been experimentally investigated. We have developed an empirical law to describe quantitatively the temperature dependence of the RSB current. A small activation energy has been found by using an Arrhenius relation, in agreement with the RSB tunneling conduction mechanism. The RSB variation at high temperature has been only estimated, as measurements of RSB oxides easily produced catastrophic breakdown. We have studied the RSB noise and identified different contributions to the characteristic random telegraph noise, correlated with the trapping and conduction characteristics of the RSB spots. An original model has been developed that successfully describes the different probability distributions of the current fluctuations that cannot be simulated by using previous models, such as those based on Lévy or Gaussian distributions. Finally, a correlation was established between the shape of the fluctuation distribution and the degradation level of the oxide.

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“…For metal oxide semiconductors and complementary metal oxide semiconductors (CMOS), the insulating SiO 2 thin layer is used as the gate dielectric, which CONTACT Q. Yang qyang@xtu.edu.cn is vital for surface electrical field control and device isolation. The radiation of high-energy ions can induce charge lose and electrical properties degradation in CMOS by charge injection into the gate dielectric (9)(10)(11)(12). For example, the SHI can produce micro-damage (harderror), which may lead to the data losing in dynamic random access memory (13).…”

Section: Introductionmentioning

confidence: 99%

Molecular dynamics study of structural damage in amorphous silica induced by swift heavy-ion radiation

Zhen

Yang

Yan

et al. 2016

Radiation Effects and Defects in Solids

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In this paper, the radiation defects induced by the swift heavy ions and the recoil atoms in amorphous SiO 2 were studied. The energy of recoil atoms induced by the incident Au ions in SiO 2 was calculated by using Monte Carlo method. Results show that the average energies of recoils reach the maximum (200 eV for Si and 130 eV for O, respectively) when the incident energy of Au ion is 100 MeV. Using Tersoff/zbl potential with the newly built parameters, the defects formation processes in SiO 2 induced by the recoils were studied by using molecular dynamics method. The displacement threshold energies (E d ) for Si and O atoms are found to be 33.5 and 16.3 eV, respectively. Several types of under-and over-coordinated Si and O defects were analyzed. The results demonstrate that Si 3 , Si 5 , and O 1 are the mainly defects in SiO 2 after radiation. Besides, the size of cylindrical damage region produced by a single recoil atom was calculated. The calculation shows that the depth and the radius are up to 2.0 and 1.4 nm when the energy of recoils is 200 eV. Finally, it is estimated that the Au ion would induce a defected track with a diameter of 4 nm in SiO 2 . ARTICLE HISTORY

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Effect of ion energy upon dielectric breakdown of the capacitor response in vertical power MOSFETs

Cited by 67 publications

References 17 publications

Effects of Ion Atomic Number on Single-Event Gate Rupture (SEGR) Susceptibility of Power MOSFETs

Effects of Ion Atomic Number on Single-Event Gate Rupture (SEGR) Susceptibility of Power MOSFETs

Noise characteristics of radiation-induced soft breakdown current in ultrathin gate oxides

Molecular dynamics study of structural damage in amorphous silica induced by swift heavy-ion radiation

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