Effects of Ion Atomic Number on Single-Event Gate Rupture (SEGR) Susceptibility of Power MOSFETs

Lauenstein, Jean-Marie; Goldsman, N.; Liu, S.; Titus, J.L.; Ladbury, Raymond L.; Kim, H. S.; Phan, Anthony M.; LaBel, Kenneth A.; Zafrani, M.; Sherman, P.

doi:10.1109/tns.2011.2171995

Cited by 22 publications

(9 citation statements)

References 12 publications

(9 reference statements)

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“…This SV is based on two observations obtained from the TCAD simulations: 1) the area under the channel and neck regions is the most sensitive and 2) charge generated near the epi/substrate junction is more likely to produce SEB than charge generated nearer to the surface. This effect is consistent with the prior work on single-event gate rupture showing that the region of charge deposition can influence device response [23]. Although the failure mechanism considered here (SEB) is different, both mechanisms are triggered by rearrangement of the potential in the epi region.…”

Section: Neutron-induced Seb Sensitive Volumesupporting

confidence: 91%

Estimating Terrestrial Neutron-Induced SEB Cross Sections and FIT Rates for High-Voltage SiC Power MOSFETs

Ball

Sierawski

Galloway

et al. 2019

IEEE Trans. Nucl. Sci.

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Cross sections and failure in time rates for neutroninduced single-event burnout (SEB) are estimated for SiC power MOSFETs using a method based on combining results from heavy ion SEB experimental data, 3-D TCAD prediction of sensitive volumes, and Monte Carlo radiation transport simulations of secondary particle production. The results agree well with experimental data and are useful in understanding the mechanisms for neutron-induced SEB data. Index Terms-Cross section, failure in time (FIT), heavy ion, Monte Carlo, MOSFET, Monte Carlo radiative energy deposition (MRED), neutron, power, silicon carbide (SiC), singleevent burnout (SEB).

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Section: Neutron-induced Seb Sensitive Volumesupporting

confidence: 91%

Estimating Terrestrial Neutron-Induced SEB Cross Sections and FIT Rates for High-Voltage SiC Power MOSFETs

Ball

Sierawski

Galloway

et al. 2019

IEEE Trans. Nucl. Sci.

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“…However, the physical mechanisms of the capacitor SEGR response have not been well studied. The capacitor SEGR response was studied by Sexton et al based on the concept of the plasma pipe [98][99][100][101][102][103]. A model to describe the transient electric field induced by the ion strike in oxide was proposed by Luo Y.H.…”

Section: Influence Of High-energy Particles On Semiconductor Devicesmentioning

confidence: 99%

TSV Technology and High-Energy Heavy Ions Radiation Impact Review

Tian

Liu

2018

Electronics

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Three-dimensional integrated circuits (3D IC) based on TSV (Through Silicon Via) technology is the latest packaging technology with the smallest size and quality. As a result, it can effectively reduce parasitic effects, improve work efficiency, reduce the power consumption of the chip, and so on. TSV-based silicon interposers have been applied in the ground environment. In order to meet the miniaturization, high performance and low-cost requirements of aerospace equipment, the adapter substrate is a better choice. However, the transfer substrate, as an important part of 3D integrated circuits, may accumulate charge due to heavy ion irradiation and further reduce the performance of the entire chip package in harsh space radiation environment or cause it to fail completely. Little research has been carried out until now. This article summarizes the research methods and conclusions of the research on silicon interposers and TSV technology in recent years, as well as the influence of high-energy heavy ions on semiconductor devices. Based on this, a series of research methods to study the effect of high-energy heavy ions on TSV and silicon adapter plates is proposed.Electronics 2018, 7, 112 2 of 29 wafer was invented by M.G Smith et al. [2], which opposite surfaces were connected ohmically to the degenerately doped portions to be electrically connected along the thru-connection. With further research and exploration, 2.5D/3D integration technology with TSV realized integrated circuits with advantages of high interconnection density, high performance, low power consumption, and low cost [3,4]. In addition, the core is widely considered to be the leading technology in the field of high density packaging in the future and is an effective way to break through Moore's Law [5][6][7]. Figure 1. Silicon interposer through electrical copper coating technology production: (a) The construction of through-silicon via on the wafer; (b) The dry film etchant is stuck on the wafer, then exposed and etched; (c) Hole plating and pad fabrication by electroplating methods; (d) The photoresist removing. Adapted with permission from [27], Copyright Elsevier, 2016.

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“…DSEE mechanisms research continues to be an active area of inquiry, and each new study emphasizes that DSEE susceptibility cannot be characterized purely in terms of ion LET [8]- [12]. Single-event latchup (SEL) is a parasitic bipolar effect in CMOS circuits (see Fig.…”

Section: Dsee Mechanisms and Representative Svmentioning

confidence: 99%

“…Single-event gate rupture (SEGR) in power MOSFETs depends not just on the charge generated by an ion in the SV, but also on the ion angle of incidence and even its atomic number Z [8] (see Fig. 3).…”

Section: Dsee Mechanisms and Representative Svmentioning

confidence: 99%

See 1 more Smart Citation

Use of Proton SEE Data as a Proxy for Bounding Heavy-Ion SEE Susceptibility

Ladbury

Lauenstein

Hayes

2015

IEEE Trans. Nucl. Sci.

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We examine use of proton single-event effect (SEE) data to constrain heavy-ion SEE susceptibility. We discuss limitations due to short-range proton recoils, especially for destructive SEE modes. We develop an equivalent linear energy transfer metric that reduces risk that proton data will significantly underestimate SEE susceptibility and suggest a probabilistic model for using proton data to constrain device-sensitive volumes.Index Terms-Heavy ions, probabilistic risk assessment, proton radiation effects, radiation hardness assurance methodology, single-event effect (SEE), single-event latchup (SEL).

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Effects of Ion Atomic Number on Single-Event Gate Rupture (SEGR) Susceptibility of Power MOSFETs

Cited by 22 publications

References 12 publications

Estimating Terrestrial Neutron-Induced SEB Cross Sections and FIT Rates for High-Voltage SiC Power MOSFETs

Estimating Terrestrial Neutron-Induced SEB Cross Sections and FIT Rates for High-Voltage SiC Power MOSFETs

TSV Technology and High-Energy Heavy Ions Radiation Impact Review

Use of Proton SEE Data as a Proxy for Bounding Heavy-Ion SEE Susceptibility

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