Brian D. Sierawski scite author profile

Heavy ion data suggest that a common mechanism is responsible for single-event burnout in 1200 V power MOSFETs and junction barrier Schottky diodes. Similarly, heavy ion data suggest a common mechanism is also responsible for leakage current degradation in both devices. This mechanism, based on ion-induced, highlylocalized energy pulses, is demonstrated in simulations and shown to be capable of causing degradation and singleevent burnout for both the MOSFETs and JBS diodes.

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Multiple-Bit Upset in 130 nm CMOS Technology

Tipton

Pellish

Reed

et al. 2006

IEEE Trans. Nucl. Sci.

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General Framework for Single Event Effects Rate Prediction in Microelectronics

Weller

Reed

Warren

et al. 2009

IEEE Trans. Nucl. Sci.

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