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Results of capacitance-voltage measurements are reported for metal-oxide-semiconductor capacitors fabricated using the 4H polytype of silicon carbide doped with either nitrogen ͑n͒ or aluminum ͑p͒. Annealing in nitric oxide after a standard oxidation/reoxidation process results in a slight increase in the defect state density in the lower portion of the band gap for p-SiC and a significant decrease in the density of states in the upper half of the gap for n-SiC. Theoretical calculations provide an explanation for these results in terms of N passivating C and C clusters at the oxide-semiconductor interface.

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Heavy ion irradiation was simulated using a Geant4 based Monte-Carlo transport code. Electronic and nuclear physics were used to generate statistical profiles of charge deposition in the sensitive volume of an SEU hardened SRAM. Simulation results show that materials external to the sensitive volume can affect the experimentally measured cross-section curve.

We report the confirmed occurrence of Fowler–Nordheim hole tunneling in p-4H–SiC metal-oxide-semiconductor capacitor structures. The effective mass for holes in the oxide is found to be in the range of 0.35m–0.52m, where m is the free electron mass.