Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide

Chung, Gil Yong; Tin, C. C.; Williams, John R.; McDonald, K.; Chanana, R.K.; Weller, Robert A.; Pantelides, Sokrates T.; Feldman, L. C.; Holland, O. W.; Das, Mrinal K.; Palmour, John W.

doi:10.1109/55.915604

Cited by 582 publications

(323 citation statements)

References 15 publications

Supporting

Mentioning

231

Contrasting

Unclassified

Order By: Relevance

“…1 This is considered to be caused by low channel mobility, which is attributed to high trap densities at and/or near the SiO 2 -SiC interface. 2 Therefore, an understanding of the structure of the interface and the formation mechanism of the interface layer are important to realize SiC-MOSFETs with the necessary quality. Moreover, since the reliability of gate oxide thermally grown on SiC has been reported to be lower than that grown on Si, improvement in oxide reliability is also important for the practical use of SiC-MOSFETs.…”

Section: Introductionmentioning

confidence: 99%

Oxygen partial pressure dependence of the SiC oxidation process studied by in-situ spectroscopic ellipsometry

Kouda

Hijikata

Yagi

et al. 2012

Journal of Applied Physics

View full text Add to dashboard Cite

The oxygen partial pressure dependence of the Silicon carbide (SiC) oxidation process was investigated using in-situ spectroscopic ellipsometry at oxygen partial pressures between 1 and 0.02 atm for 4 H-SiC (0001) Si- and (000−1) C-faces. Analyses of the interface structure between the oxide and SiC indicate that the interface layer has a modified SiC-like structure around 1 nm thick accompanied by oxide growth; the structure and thickness do not change after an oxide growth of about 7 nm. The oxide thickness dependence of the growth rate at sub-atmospheric oxygen pressures is similar to that at 1 atm pressure, that is, just after oxidation starts, the growth rate rapidly decreases as the oxidation proceeds. After an oxide growth of about 7 nm thick, the deceleration of the growth rate suddenly changes to a gentle slope. The thickness at which deceleration changes depends slightly on both the oxygen partial pressure and surface polarity of the SiC substrate. The origins of these two deceleration stages, i.e., rapid and gentle decelerations, are discussed from their pressure dependencies based on the SiC oxidation model taking into account the interfacial emission of Si and C atoms. The formation and structures of the interface layers are also discussed in relation to the oxidation mechanisms.

show abstract

Section: Introductionmentioning

confidence: 99%

Oxygen partial pressure dependence of the SiC oxidation process studied by in-situ spectroscopic ellipsometry

Kouda

Hijikata

Yagi

et al. 2012

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…이에 본 연구에서는 PECVD 공정을 사용하여 SiO2를 형성하였으며, 기존의 질소-패시베이션 기법 [10] 을 MOS Capacitor 제작에 적용하고 건식 산화 방 [12] . 또한 SiC의 산화과정에서 미처 외부로 방출되지 못 한 C 원자가 발생하는데, 이 C 원자들이 임의로 결합 하여 흑연과 비슷한 탄소 결합체를 형성한다.…”

Section: 증착 방식을 이용하여 산화막을 형성하는 방법은 열적 성장 방식과 비교했을 때 얇은 계면 전이층 산 화막의 unclassified

SiC/SiO2 Interface Characteristics in N-based 4H-SiC MOS Capacitor Fabricated with PECVD and NO Annealing Processes

Song¹,

Kim²

2014

Journal of IKEEE

View full text Add to dashboard Cite

show abstract

“…[10][11][12] The small channel mobility is considered to be due to defects around the interface between the channel region and the gate insulation film. Therefore, a method is required to passivate the surface of SiC before depositing the gate insulation film.…”

Section: Introductionmentioning

confidence: 99%

Nitriding characteristics of 4H-SiC irradiated with remote nitrogen plasmas

Shimabayashi

Kurihara

Horikawa

et al. 2016

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

We examined the atomic concentrations and the weight densities of SiC surfaces irradiated with remote nitrogen plasmas. The unique approach of this work is that we compared the SiC surface irradiated with atomic nitrogen with that irradiated with a mixture of atomic nitrogen and molecular nitrogen in the metastable A 3 Σ + u state. As a result, it was found that molecular nitrogen in the A 3 Σ + u state has a higher efficiency than atomic nitrogen in the nitriding of SiC surfaces. The weight density measurements have revealed the removal of Si and C from the SiC surface by the irradiation of remote nitrogen plasma. These results suggest that the formation of volatile molecules is less significant when the SiC surface is irradiated with molecular nitrogen in the metastable A 3 Σ + u state.

show abstract

Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide

Cited by 582 publications

References 15 publications

Oxygen partial pressure dependence of the SiC oxidation process studied by in-situ spectroscopic ellipsometry

Oxygen partial pressure dependence of the SiC oxidation process studied by in-situ spectroscopic ellipsometry

SiC/SiO2 Interface Characteristics in N-based 4H-SiC MOS Capacitor Fabricated with PECVD and NO Annealing Processes

Nitriding characteristics of 4H-SiC irradiated with remote nitrogen plasmas

Contact Info

Product

Resources

About