Direct measurement of transient pulses induced by laser and heavy ion irradiation in deca-nanometer devices

Ferlet-Cavrois, V.; Paillet, Philippe; McMorrow, D.; Torres, A.; Gaillardin, M.; Melinger, Joseph S.; Knudson, A.R.; Campbell, A.B.; Schwank, J.R.; Vizkelethy, György; Shaneyfelt, M.R.; Hirose, Kazuyuki; Faynot, O.; Jahan, C.; Tosti, L.

doi:10.1109/tns.2005.860682

Cited by 86 publications

(43 citation statements)

References 17 publications

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“…In that work we found an excellent agreement between experimental bipolar gain values (measured by heavy ions experiments) and simulated bipolar gain obtained with 3-D numerical simulation. The results were also consistent with experimental data obtained by pulsed laser irradiation performed on 80 nm gate length FD SOI MOSFETs fabricated with the same technology [44]. In [35] the ion strikes in a location situated in the drain region, location equivalent to x=50 nm in the present work.…”

Section: Ion Strike Location Between Source and Drain Contactssupporting

confidence: 91%

“…Transient simulations have been performed considering an ion track with a Gaussian shape and a very narrow radius of 20 nm, in order to facilitate comparison with experimental and simulation results reported in references [35] and [44]. In addition, we performed in section 5.2 simulations with different track radii in order to discuss the influence of the track radius on the radiation sensitivity of the three devices simulated here.…”

Section: Simulation Modelsmentioning

confidence: 99%

“…For the previous analysis a very narrow (20 nm) was considered in order to facilitate the comparison with experimental and simulation results in [35] and [44]. In the following, we show simulation results performed with a larger characteristic radius r=70 nm and we compare them with results obtained at r=20 nm.…”

Section: Ion Track Radiusmentioning

confidence: 99%

See 2 more Smart Citations

Investigation of Sensitivity to Heavy-Ion Irradiation of Junctionless Double-Gate MOSFETs by 3-D Numerical Simulation

Munteanu¹,

Autran²

2014

Computational and Numerical Simulations

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Section: Ion Strike Location Between Source and Drain Contactssupporting

confidence: 91%

Section: Simulation Modelsmentioning

confidence: 99%

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Investigation of Sensitivity to Heavy-Ion Irradiation of Junctionless Double-Gate MOSFETs by 3-D Numerical Simulation

Munteanu¹,

Autran²

2014

Computational and Numerical Simulations

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“…FDSOI is mainly dedicated to low-power applications and provides thanks to well biasing techniques the ability to optimize dynamically the circuit's speed versus its power consumption [8]. FDSOI is also expected to bring reduced sensitivity to laser attacks due to the thin oxide box that isolates the channel of transistors from their wells [9]. This feature of FDSOI transistors is illustrated in Fig.…”

Section: Measures On Bulk and Fdsoi Componentsmentioning

confidence: 99%

Laser-Induced Fault Effects in Security-Dedicated Circuits

Beroulle

Candelier

Castro

et al. 2015

VLSI-SoC: Internet of Things Foundations

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Abstract. Lasers have become one of the most efficient means to attack secure integrated systems. Actual faults or errors induced in the system depend on many parameters, including the circuit technology and the laser characteristics. Understanding the physical effects is mandatory to correctly evaluate during the design flow the potential consequences of a laser-based attack and implement efficient counter-measures. This paper presents results obtained within the LIESSE project, aiming at defining a comprehensive approach for designers. Outcomes include the definition of fault/error models at several levels of abstraction, specific CAD tools using these models and new counter-measures well-suited to thwart laser-based attacks. Actual measures on components manufactured in the new 28 nm FDSOI technology are also presented.

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“…With increasing miniaturisation scales, a lesser amount of energy is required for an upset to reach the voltage threshold of the technology and generate a transient fault and, for the same amount of energy, those faults are shorter in duration [4]. New fabrication techniques such as silicon-on-insulator (SOI) follow this trend, with pulse widths decreasing from 250ps for 250nm feature sizes to 110ps for 100nm [5].…”

Section: Introductionmentioning

confidence: 99%

Increasing the Dependability of VLSI Systems through Early Detection of Fugacious Faults

Espinosa

Andrés

Gil

2015

2015 11th European Dependable Computing Conference (EDCC)

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Abstract-Technology advances provide a myriad of advantages for VLSI systems, but also increase the sensitivity of the combinational logic to different fault profiles. Shorter and shorter faults which up to date had been filtered, named as fugacious faults, require new attention as they are considered a feasible sign of warning prior to potential failures. Despite their increasing impact on modern VLSI systems, such faults are not largely considered today by the safety industry. Their early detection is however critical to enable an early evaluation of potential risks for the system and the subsequent deployment of suitable failure avoidance mechanisms. For instance, the early detection of fugacious faults will provide the necessary means to extend the mission time of a system thanks to the temporal avoidance of aging effects. Because classical detection mechanisms are not suited to cope with such fugacious faults, this paper proposes a method specifically designed to detect and diagnose them. Reported experiments will show the feasibility and interest of the proposal.

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Direct measurement of transient pulses induced by laser and heavy ion irradiation in deca-nanometer devices

Cited by 86 publications

References 17 publications

Investigation of Sensitivity to Heavy-Ion Irradiation of Junctionless Double-Gate MOSFETs by 3-D Numerical Simulation

Investigation of Sensitivity to Heavy-Ion Irradiation of Junctionless Double-Gate MOSFETs by 3-D Numerical Simulation

Laser-Induced Fault Effects in Security-Dedicated Circuits

Increasing the Dependability of VLSI Systems through Early Detection of Fugacious Faults

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