Investigation of Sensitivity to Heavy-Ion Irradiation of Junctionless Double-Gate MOSFETs by 3-D Numerical Simulation

Munteanu, Daniéla; Autran, Jean‐Luc

doi:10.5772/57048

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B Transient Operation1

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2018

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“…This is because of the lower charge collection for D3. For validation purpose, the simulation results are also matched with the inversion mode (IM)-double gate (DG) FET [39] for the LET values ranging from 10 to 100 M eV /(mg/cm 2 ) and found our results are in agreement with [39]. Though the observation is not so simple due to the difference in structural configurations.…”

Section: B Transient Operationmentioning

confidence: 56%

3-D TCAD Assessment of Fin-Based Hybrid Devices Under Heavy Ion Irradiation in 20-nm Technology

Pradhan

Saha

Artola

et al. 2018

IEEE Trans. Device Mater. Relib.

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In this paper, the single event transient response in nanometer hybrid FinFETs like Wavy and Symmetric Dual-k Spacer (SDS) Wavy FinFETs are systematically investigated. The novel SDS Wavy FinFETs consist of an ultra-thin body (UTB), FinFET, and spacer engineering on a single silicon-on-insulator (SOI) platform. Three-dimensional quantum simulations are used to study the heavy ion irradiation on 20 nm n-type hybrid devices. The physical insight on the post ion irradiation of the devices are carefully observed and compared with the conventional FinFETs. The effects of heavy ion irradiation on various parameters including current density, ion generation, transient current, and bipolar amplification are estimated. Furthermore, the post-ion irradiation is also examined as a function of ion characteristic time and ion-track radius.

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Section: B Transient Operationmentioning

confidence: 56%