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Now a days FinFETs integrated into complex circuit applications can fulfill the demand of smartphones and tablets for better performance and make chips that can compute faster. This work studies the impact of HFin and WFin variations on various performance matrices including static as well dynamic figures of merit (FOMs). With the help of Aspect Ratio (WFin/HFin). The device is branched into three parts i.e., FinFET, Trigate, and Planar MOSFET. This unique report is a presentation of a detailed analysis about the impact of fin height (HFin) and width (WFin) on various performances including the DC as well as AC figures of merit (FOMs). The static or low frequency performances like threshold voltage (Vth), on current (Ion), off current (Ioff), power dissipation, transconductance (gm), output conductance (gd), transconductance generation factor (TGF=gm/ID), early voltage (VEA), gain (AV) and dynamic or high frequency performances as gate capacitance (Cgg), cutoff frequency (fT), output resistance (R0), intrinsic delay are systematically presented with the variation of device geometry parameters. The results presented in this report can be of great help to device engineers in designing 3-D devices as per their requirement.A 1536-125X (c)

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When subjected to a change in dimensions, the device performance decreases. Multi-gate SOI devices, viz. the Double Gate MOSFET (DG-MOSFET), are expected to make inroads into integrated circuit applications previously dominated exclusively by planar MOSFETs. The primary focus of attention is how channel engineering (i.e. Graded Channel (GC)) and gate engineering (i.e. Dual Insulator (DI)) as gate oxide) creates an effect on the device performance, specifically, leakage current (I off ), on current (I on ), and DIBL. This study examines the performance of the devices, by virtue of a simulation analysis, in conjunction with N-channel DG-MOSFETs. The important parameters for improvement in circuit speed and power consumption are discussed. From the analysis, DG-DI MOSFET is the most suitable candidate for high speed switching application, simultaneously providing better performance as an amplifier.