Loss mechanisms in CZTS and CZTSe Kesterite thin-film solar cells: Understanding the complexity of defect density

Sravani, L.; Routray, Soumyaranjan; Courel, Maykel; Pradhan, K P

doi:10.1016/j.solener.2021.08.052

Cited by 46 publications

(27 citation statements)

References 33 publications

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“…In addition to that, many literatures show the use to these two distributions for defects as it is matching quite closely with fabricated device [28], [29]. The final density of states is shown in the following model [19], [24]. 3).…”

Section: Device Structure and Simulationmentioning

confidence: 62%

“…ZnO, like thickness, doping, electron affinity, permittivity, etc., are listed in Table . I as they were taken in the literature [18], [19], [24], [25]. As an emerging inorganic solar cell, a CCdTSbased solar cell with an efficiency of 7.9 % has been reported [20], [27].…”

Section: Device Structure and Simulationmentioning

confidence: 99%

“…3). In the literature, one may find a more in-depth explanation of the model implementation [19], [24], [25].…”

Section: Device Structure and Simulationmentioning

confidence: 99%

“…1) Gaussian Distribution: When there is an increase in the defect density, the performance of the solar cell is expected to decrease [19], [25]. Fig.…”

Section: Effect Of Absorber Layer Defect Concentrationmentioning

confidence: 99%

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Understanding Performance Limitation of CuCdSnS as Photoactive Layer: Physics of Defect States and Recombination Mechanisms

et al. 2022

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There is a plethora of thin-film photovoltaic materials like CIGS, CIGSSe, CZTS, CZTSSe, etc. that are currently under research and are suitable for commercial use. In this study, a Cu 2 CdSnS 4 (CCdTS) based thin-film solar cell is simulated using SILVACO TCAD to extract its optical and electrical properties such as efficiency, electric field, short circuit current, quantum efficiency, etc. The device is also optimized by variation of such physical parameters as thickness, doping concentration and material defects of the absorber layer. A remarkable efficiency of 21.2% is reached under the condition of defect absence, whereas an efficiency of 7.5% is obtained for the defect presence in the absorber layer. Changes in behavior of the solar cell with material defects following Gaussian and Tail type distribution are also analyzed and corresponding conclusions are drawn.

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Section: Device Structure and Simulationmentioning

confidence: 62%

Section: Device Structure and Simulationmentioning

confidence: 99%

“…3). In the literature, one may find a more in-depth explanation of the model implementation [19], [24], [25].…”

Section: Device Structure and Simulationmentioning

confidence: 99%

“…1) Gaussian Distribution: When there is an increase in the defect density, the performance of the solar cell is expected to decrease [19], [25]. Fig.…”

Section: Effect Of Absorber Layer Defect Concentrationmentioning

confidence: 99%

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Understanding Performance Limitation of CuCdSnS as Photoactive Layer: Physics of Defect States and Recombination Mechanisms

et al. 2022

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“…Expectedly, that among the many factors that limit PCE, the most important in spray pyrolysis deposited films are defects at the grain boundaries where high density of traps could be formed. These traps can be responsible for the formation of the additional electronic states or even intra-bandgap states 13 leading to a limited charge carrier separation and increased recombination in the material, therefore disrupting charge carrier motion in the semiconductor and consequently lowering performance parameters of the solar cell.…”

Section: Introductionmentioning

confidence: 99%

Improvement of CZTSSe film quality and superstrate solar cell performance through optimized post-deposition annealing

Pakštas

Grincienė

Selskis

et al. 2022

Sci Rep

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Improving the performance of kesterite solar cells requires high-quality, defect-free CZTS(Se) films with a reduced number of secondary phases and impurities. Post-annealing of the CZTS films at high temperatures in a sulfur or selenium atmosphere is commonly used to improve the quality of the absorbing material. However, annealing at high-temperatures can promote material decomposition, mainly due to the loss of volatile elements such as tin or sulfur. In this work, we investigate how the additional step of sulfurization at reduced temperatures affects the quality and performance of CZTSSe based solar cells. A comprehensive structural analysis using conventional and high resolution XRD as well as Raman spectroscopy revealed that the highest CZTSSe material quality with the lowest structural disorder and defect densities was obtained from the CZTS films pre-sulfurized at 420 °C. Furthermore, we demonstrate the possibility of using Sb2Se3 as a buffer layer in the superstrate configuration of CZTSSe solar cells, which is possible alternative to replace commonly employed toxic CdS as a buffer layer. We show that the additional low-temperature selenization process and the successful use of Sb2Se3 as a buffer layer could improve the performance of CZTSSe-based solar cells by up to 3.48%, with an average efficiency of 3.1%.

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Theoretical Modeling of Perovskite–Kesterite Tandem Solar Cells for Optimal Photovoltaic Performance

Jayan¹

2022

Energy Tech

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Herein, a solar cell device simulation study is performed using the solar cell capacitance simulator 1D tool to assess the performance parameters of a monolithic two‐terminal (2‐T) and a mechanically stacked four‐terminal (4‐T) tandem solar cell with a top perovskite subcell and a bottom subcell consisting of a perovskite material FA0.83Cs0.17PbI1.5Br1.5 and a kesterite photovoltaic material Cu2ZnSnSe4 as the light‐harvesting material, respectively. The 2‐T tandem device design furnishes a open‐circuit voltage, short‐circuit current density, fill factor, and power conversion efficiency (PCE) of 1.81 V, 18.18 mA cm−2, 66.18%, and 31.15%, respectively, while establishing the condition of matching the short‐circuit current density between the top perovskite and bottom kesterite cells. The 4‐T device furnishes a high PCE of 37.49% when the filtered spectrum is used for modeling the bottom subcell. Further, the optimization of the input parameters of the light active layers of the top and bottom cells leads to an increase in PCE of the 4‐T tandem device to 37.84%.

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Loss mechanisms in CZTS and CZTSe Kesterite thin-film solar cells: Understanding the complexity of defect density

Cited by 46 publications

References 33 publications

Understanding Performance Limitation of CuCdSnS as Photoactive Layer: Physics of Defect States and Recombination Mechanisms

Understanding Performance Limitation of CuCdSnS as Photoactive Layer: Physics of Defect States and Recombination Mechanisms

Improvement of CZTSSe film quality and superstrate solar cell performance through optimized post-deposition annealing

Theoretical Modeling of Perovskite–Kesterite Tandem Solar Cells for Optimal Photovoltaic Performance

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