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In this work, the carrier confinement mechanism through nanostructures is studied in a copper-zinc-tin-sulfide/Cu2ZnSnSe4-type kesterite material, resulting in a remarkable performance enhancement of solar cells. The effect of the quantized energy band, recombination rate, and escape mechanism on the spectral response of solar cells is explored in detail. The mathematical model for carrier dynamics and performance measuring parameters are analyzed and optimized. Moreover, the number of quantum wells is incorporated gradually up to 100 and the corresponding performances are explored. It is observed that with the increase in the number of wells, photogenerated current density enhances significantly up to a saturation point and then deteriorates. A remarkable efficiency of 24.8% and more than 80% of quantum efficiency are achieved from 50 numbers of quantum wells with 79.8% of fill factor.

In this paper, a new Z-shaped gate TFET structure is proposed with an n+ horizontal pocket insertion beneath the source. The Z-TFET structure provides higher ON current by 2-decades as compared to conventional TFET due to the vertical tunneling and presence of HfO 2 gate oxide. Similarly, the ambipolar current reduces by 2-decades without affecting subthreshold swing (SS) and OFF current significantly. The ON current is further improved by positioning

Kesterite materials, such as copper–zinc–tin–sulfide (CZTS) solar cell, have received considerable attention for low‐cost and high‐efficiency solar cells. However, the material suffers from poor quality of thin film during deposition, which, in turn, creates multiple grain boundaries along the layer. Consequently, a higher density of defects is randomly formed throughout the layer. Herein, the impact of different loss mechanisms on solar cell performance is analyzed. Numerical investigation on the influence of different loss mechanisms such as radiative recombination and recombination through traps and defects on the performance of the device is presented. A remarkable efficiency decrement of 10% in the devices is found due to the presence of defects and grain boundaries.

Gate-all-around (GAA) MOSFETs are the best multi-gate MOSFET structure due to their strong electrostatic control over the channel. The electrostatic controllability can be enhanced further by applying some gate engineering technique to the existing GAA structure. This paper investigates the effect of inner gate (core gate) on the electrostatic performance of conventional GAA MOSFET. The inner gate engineering increases both the electrostatic control and packing density of GAA MOSFET. In this paper, we have presented an inner-gate-engineered (IGE) GAA MOSFET and inspected its advantages over conventional counterparts. The proposed structure exhibits higher [Formula: see text] ratio, low threshold voltage and improved RF performances as compared to the conventional structure. Analytic simulation has been carried out for numerous figures of merit (FOMs) for different technology nodes.

In this paper, we present a new Z-shaped line tunnel field effect transistor (TFET) employing drain doping engineering with a split drain structure (SD-ZHP-TFET). The split drain (SD) approach in the proposed ZHP-TFET helps increasing tunneling width at the channel-drain interface, reducing ambipolarity. Moreover, a horizontal pocket (HP) is implanted in the source region to boost the ON-current of the proposed SD-ZHP-TFET structure. The effect of both these approaches in the line-TFET provides higher ON-current and reduces ambipolarity significantly. Split drain structure in the ZHP-TFET exhibits a three-decade improvement in the ambipolar current without affecting the subthreshold (SS) and leakage current significantly. A calibrated simulation study of split drain thickness (t u ) and drain region doping variation on the analog performance are investigated using the technology computer-aided design device simulator. Moreover, the high-frequency figure of merit regarding total gate capacitance (C gg ), unit-gain cut-off frequency (f T ) is analysed. It is found that the drain doping improves the cut-off frequency from 1.8 GHz in ZHP-TFET to 2.2 GHz in the proposed SD-ZHP-TFET structure. Thus the proposed device is capable of providing higher I ON /I OFF (≈10 13 ) and I ON /I AMB (≈10 13 ) ratio with an average SS of 44 mV/decade.

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