Kesterite Thin‐Film Solar Cell: Role of Grain Boundaries and Defects in Copper–Zinc–Tin–Sulfide and Copper–Zinc–Tin–Selenide

Sravani, L.; Routray, Soumyaranjan; Pradhan, K P; Courel, Maykel

doi:10.1002/pssa.202100039

Cited by 14 publications

(15 citation statements)

References 35 publications

(44 reference statements)

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“…In addition to that, many literatures show the use to these two distributions for defects as it is matching quite closely with fabricated device [28], [29]. The final density of states is shown in the following model [19], [24]. 3).…”

Section: Device Structure and Simulationmentioning

confidence: 59%

“…ZnO, like thickness, doping, electron affinity, permittivity, etc., are listed in Table . I as they were taken in the literature [18], [19], [24], [25]. As an emerging inorganic solar cell, a CCdTSbased solar cell with an efficiency of 7.9 % has been reported [20], [27].…”

Section: Device Structure and Simulationmentioning

confidence: 99%

“…3). In the literature, one may find a more in-depth explanation of the model implementation [19], [24], [25].…”

Section: Device Structure and Simulationmentioning

confidence: 99%

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Understanding Performance Limitation of CuCdSnS as Photoactive Layer: Physics of Defect States and Recombination Mechanisms

et al. 2022

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There is a plethora of thin-film photovoltaic materials like CIGS, CIGSSe, CZTS, CZTSSe, etc. that are currently under research and are suitable for commercial use. In this study, a Cu 2 CdSnS 4 (CCdTS) based thin-film solar cell is simulated using SILVACO TCAD to extract its optical and electrical properties such as efficiency, electric field, short circuit current, quantum efficiency, etc. The device is also optimized by variation of such physical parameters as thickness, doping concentration and material defects of the absorber layer. A remarkable efficiency of 21.2% is reached under the condition of defect absence, whereas an efficiency of 7.5% is obtained for the defect presence in the absorber layer. Changes in behavior of the solar cell with material defects following Gaussian and Tail type distribution are also analyzed and corresponding conclusions are drawn.

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Section: Device Structure and Simulationmentioning

confidence: 59%

Section: Device Structure and Simulationmentioning

confidence: 99%

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Understanding Performance Limitation of CuCdSnS as Photoactive Layer: Physics of Defect States and Recombination Mechanisms

et al. 2022

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“…have emerged as promising PV materials due to their low cost, high absorption coefficients

{(> 10}^{4} {cm}^{- 1})

, and direct and tunable bandgap properties. [ 3–5 ] Generally, CdS, ZnS, and CdZnS are used as buffer layer with kesterite absorber layer. However, combination of CdS/kesterite absorber layer is very popular to reduce carrier recombination and enhance the performance of solar cell.…”

Section: Introductionmentioning

confidence: 99%

Boosting the Efficiency of Kesterite Solar Cell: Use of Ag Mixed Cu₂ZnSnS₄Intermediate Thin Film Layer

Routray

2022

Physica Status Solidi (a)

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Photovoltaic (PV) technology is one of the direct means of exploiting the sun's energy into the useable energy. [1,2] In recent days, kesterite-based thin film solar cells such as CZTS, CZTSe, CZTSSe, etc. have emerged as promising PV materials due to their low cost, high absorption coefficientsð> 10 4 cm À1 Þ, and direct and tunable bandgap properties. [3][4][5] Generally, CdS, ZnS, and CdZnS are used as buffer layer with kesterite absorber layer. However, combination of CdS/kesterite absorber layer is very popular to reduce carrier recombination and enhance the performance of solar cell. [6] There are number of reports published over the years to enhance the efficiency of kesterite solar cell. [7] Recently, Et-taya et al. reported highest efficiency of 23.16% with CdS/CZTSSe solar cell. [8] According to solar cell efficiency tables (version 55), the notable power conversion efficiency (PEC) of fabricated CZTS reaches up to 11.0% and 12.6% for CZTSSe solar cell. [9] However, bulk defects, secondary phase formation, and grain boundaries of kesterite materials are the measure parameters for low power conversion efficiency (PCE) and open-circuit voltage (V OC ). [10,11] To increase the performance, the thin film kesterite solar cell has to overcome the rollover effect (crossing the dark and illuminated I-V curve) due to both bulk defects and a back contact (BC) barrier. [12] Hence, to overcome drawback of barrier, grain boundaries, and recombination rate in CZTS, superlattice structure of ACZTS layer is proposed to enhance the PCE and open-circuit voltage (V OC ) up to remarkable level. [13,14] It is reported that doping (Ag) with (Cu) reduces I-II antisite defect, band tailing, and enlarges grain boundaries for kesterite solar cell which improve performance of the device. [15,16] Furthermore, the layout of Uday Saha et al. is investigated and analyzed on silver (Ag) mixed CZTS/CZTSe (active layer) and CZTS/CZTSe (back surface field [BSF] layer) which plays a significant role in improving the performance of singlejunction solar cells. [17,18] Moreover, their research primarily confined to CZTS/CZTSe material. As CZTSSe material allows more flexibility in tuning parameters and achieving highperformance enhancement, it is vital to examine the performance of CZTSSe and ACZTS/CZTSSe configuration.In this article, four different kesterite solar cell structures are simulated, analyzed, and compared. Analysis of Mo/CZTS/CdS/ ZnO/AZO (structure I) thin film primary kesterite solar cell structure is carried out to explore the performance degrading parameters of PCE and open-circuit voltage. Furthermore, another interesting and attractive absorber material CZTSSe is also explored and compared with structure I. The kesterite material CZTSSe has optical absorption coefficient 10 4 cm À1 , which is efficient enough to achieve high quantum efficiency (QE). The analysis of Mo/CZTSSe/CdS/ZnO/AZO (structure III) with different composition ratio of CZTSSe is varied, optimized, and compared with structure I. To improve their carrier ...

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“…The achievable conversion efficiency of CZTS solar cell is just around 12.6% due to the presence of on-site defects with absorber. [9][10][11][12][13][14][15][16][17] In addition to this, incorporation of nanostructure with carrier confinement increases the overall performance of solar cell as compared to bulk solar cell. [18][19][20][21] On the other hand, the performance of CFTS and CFTSe is less explored.…”

mentioning

confidence: 99%

Retrieving Carrier Population and Collection Efficiency in CFTS/CFTSe‐Based Solar Cell Using Low‐Dimensional Multiple Nanostructures

Varku

Pradhan

Routray

2022

Physica Status Solidi (a)

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In recent times, research communities are working on device to harvest solar energy at low cost. Copper‐based quaternary chalcogenides are one among the leading materials in the field. Herein, the electrical and optical performance of quantum well embedded Cu 2 - Fe - Sn - normalS 4 (CFTS) solar cell is investigated in detail. Multiple quantum wells (MQWs) with different bandgaps ensure wider photon absorption of solar spectrum. Hence, MQWs made up of CFTSe/CFTS are incorporated with a variation in well size and well numbers. All the electrical parameters and optical parameters such as power conversion efficiency, quantum efficiency, and its dependence on carrier quantization are discussed in detail. More than 80% external quantum efficiency with just 2 QWs shows the efficient carrier generation and collection of the proposed structure. Device with 10 QWs of size 18/10 nm of CFTSe/CFTS can achieve remarkable efficiency of 21% with good trade‐off between J sc and fill factor.

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Kesterite Thin‐Film Solar Cell: Role of Grain Boundaries and Defects in Copper–Zinc–Tin–Sulfide and Copper–Zinc–Tin–Selenide

Cited by 14 publications

References 35 publications

Understanding Performance Limitation of CuCdSnS as Photoactive Layer: Physics of Defect States and Recombination Mechanisms

Understanding Performance Limitation of CuCdSnS as Photoactive Layer: Physics of Defect States and Recombination Mechanisms

Boosting the Efficiency of Kesterite Solar Cell: Use of Ag Mixed Cu₂ZnSnS₄Intermediate Thin Film Layer

Retrieving Carrier Population and Collection Efficiency in CFTS/CFTSe‐Based Solar Cell Using Low‐Dimensional Multiple Nanostructures

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Kesterite Thin‐Film Solar Cell: Role of Grain Boundaries and Defects in Copper–Zinc–Tin–Sulfide and Copper–Zinc–Tin–Selenide

Cited by 14 publications

References 35 publications

Understanding Performance Limitation of CuCdSnS as Photoactive Layer: Physics of Defect States and Recombination Mechanisms

Understanding Performance Limitation of CuCdSnS as Photoactive Layer: Physics of Defect States and Recombination Mechanisms

Boosting the Efficiency of Kesterite Solar Cell: Use of Ag Mixed Cu2ZnSnS4Intermediate Thin Film Layer

Retrieving Carrier Population and Collection Efficiency in CFTS/CFTSe‐Based Solar Cell Using Low‐Dimensional Multiple Nanostructures

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Boosting the Efficiency of Kesterite Solar Cell: Use of Ag Mixed Cu₂ZnSnS₄Intermediate Thin Film Layer