This paper describes the synthesis of Cu(ii), Co(ii) and Ni(ii) catalysts immobilized on imine-functionalized silica gel through a 3-aminopropyltriethoxysilane linker.

All‐inorganic lead halide perovskites with good surface morphology show substantial prospect for optoelectronic devices. However, the anion exchange of coordinated alkylamine ligands (e.g., oleic acid and oleylamine) can detach ligands and induce more interface trap sites, subsequently to reduce device performance. In this paper, therefore, a simple solution‐processed route is presented to synthesize quasi coreshell CsPbBr3formamidinium iodide (FAI = CH(NH2)2I) colloidal quantum dots (CQDs), and then it is applied as the active layer for photodetectors by finely controlling the ligands exchange. The presence of FAI = CH(NH2)2I on CsPbBr3 is confirmed by Fourier transform infrared spectroscopy. As a result, the photodetector ITO/ZnO (100 nm)/CsPbBr3 (150 nm)/Au show an enhanced specific detectivity over 1013 Jones with a responsivity of 19 A W1 under 3 mW cm2 405 nm illumination at 1.5 V. The experimental data show that the enhanced device performance is due to the improved crystallinity and less surface defects of CsPbBr3 CQDs, as the result of less alkylamine ligands is detached during its FAI passivation, thus the charge carriers' mobility of the film is improved. Therefore, it provides a promising way for high‐performance solution‐processed all‐inorganic CsPbBr3 based optoelectronic devices.

Solution-phase, template-free synthesis of PbI2 and MAPbI3 nano/microtubes and their applications in high-sensitivity photodetectors are presented.

Heterostructures composed of nano-/micro-junctions, combining the excellent photon harvesting properties of nano-systems and the ultrafast carrier transfer of micro-systems, have a promising role in high-performance photodetectors. In this paper, a highly-sensitive trilayer self-powered perovskite-based photodetector ITO/ZnO (70 nm)/CdS (150 nm)/CsPbBr3 (200 nm)/Au, in which the CdS nanorods (NRs) layer is sandwiched between a ZnO/CsPbBr3 interface to reduce the interfacial charge carriers’ recombination and the charge transport resistance, is presented. Due to the strong built-in potential and the internal driving electric-field, an ultra-high On/Off current ratio of 106 with a responsivity of 86 mA W−1 and a specific detectivity of 6.2 × 1011 Jones was obtained at zero bias under 85 µW cm−2 405 nm illumination and its rise/decay time at zero bias is 0.3/0.25 s. Therefore, the enhanced device performance strongly suggests the great potential of such a trilayer heterojunction device for use in high-performance perovskite photodetectors.

Colloidal quantum dots (CQDs) are very promising nanomaterials for optoelectronics due to their tunable bandgap and quantum confinement effect. All-inorganic CsPbX 3 (X=Br, Cl and I) perovskite nanocrystals (NCs) have attracted enormous interests owing to their promising and exciting applications in photovoltaic devices. In this paper, all-solution-processed UV-IR broadband trilayer photodetectors ITO/ZnO/PbS/CsPbBr 3 /Au and ITO/ZnO/CsPbBr 3 /PbS/Au with high performance were presented. The role of CsPbBr 3 QDs layer as the carriers-extracting layer in the trilayer devices was discussed. As compared with bilayer device ITO/ZnO/PbS/Au, both the dark currents and photocurrents under illumination from trilayer photodetectors are enhanced, but the trilayer photodetector ITO/ZnO(80 nm)/PbS(150 nm)/CsPbBr 3 (50 nm)/Au showed a maximum specific detectivity (D * ) of 8.3×10 12 Jones with a responsivity (R) of 35 A W −1 under 1.6 mW cm −2 980 nm illumination. However, another trilayer photodetector ITO/ZnO(80 nm)/CsPbBr 3 (50 nm)/ PbS(150 nm)/Au showed a maximum D * of 1.73×10 12 Jones with a R of 5.31 A W −1 under 6.8 mW cm −2 405 nm illumination. Further, the underlying mechanism for the enhanced performance of trilayer photodetectors was discussed. Thus, this strategy of all-solution-processed heterojunction configuration paves a facile way for broadband photodetectors with high performance.

A facile method to synthesize a CH3NH3PbI3: MoS2 nanohybrid for high-performance solution-processed photodetectors is presented. The interfacial charge carriers transfer due to the existence of heterojunctions between the 2D MoS2 nanosheet and perovskite cuboids are utilized to enhance the device performance. The dark current of the photodiode Au/CH3NH3PbI3: MoS2/Au was suppressed and its photocurrent was enhanced when compared to a pristine perovskite nanocrystal device Au/CH3NH3PbI3/Au. The lowest dark current of 0.34 × 10−9 A was observed from the photodiode Au/CH3NH3PbI3: MoS2/Au and the photoresponsivity and photosensitivity increased from 312 mA W−1 to 696 mA W−1 and from 9.02 to 87.47, respectively, showing an enhancement of 123.1% and 869.7%. Also, the rising time and falling time were reduced from 73 ms to 50 ms and 60 ms to 16 ms, respectively, when compared to those for the pristine perovskite nanocrystal-based photodiode Au/CH3NH3PbI3/Au. Therefore, this method provides a simple and effective approach to synthesize 2D nanosheet blended organic–inorganic nanohybrids for application in optoelectronic devices.

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Organic and inorganic entities have been hybridized using 3-aminopropyltriethoxysilane (APTES) linker for the synthesis of three novel organic–inorganic hybrid catalysts [Cu(ii), Co(ii) and Ni(ii)].