Low-dimensional organic-inorganic hybrid metal halides have drawn intense attention due to its flexibility structure and outstanding optical properties. However, the toxicity of lead halide hinders its future application in optoelectronic...

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Commercial photodetectors based on silicon are extensively applied in numerous fields. Except for their high performance, their maximum absorption wavelength is not over than 1100 nm and incident light with longer wavelengths cannot be detected; in addition, their cost is high and their manufacturing process is complex. Therefore, it is meaningful and significant to extend absorption wavelength, to decrease cost, and to simplify the manufacturing process while maintaining high performance for photodetectors. Due to the properties of size-dependent bandgap tunability, low cost, facile processing, and substrate compatibility, solution-processed colloidal quantum dots (CQDs) have recently gained significant attention and become one of the most competitive and promising candidates for optoelectronic devices. Among these CQDs, lead chalcogenide CQDs are getting very prominent and are widely investigated. In this paper, the recent progress of infrared (IR) photodetectors based on lead sulfide (PbS), lead selenide (PbSe), and ternary PbS x Se 1−x CQDs, and their underlying concepts, breakthroughs, and remaining challenges are reviewed, thus providing guidance for designing high-performance quantum-dot IR photodetectors.

A lead-free compund of (TBAC)SnCl3 (TBAC = tetrabutylammonium chloride) with high anti-water stability was reported, which can be stable in water for 24 hours. Upon photoexcitation, this compound exhibits a...

Solution-phase, template-free synthesis of PbI2 and MAPbI3 nano/microtubes and their applications in high-sensitivity photodetectors are presented.

To enhance the device performance of all-inorganic perovskite photodetectors via constructing both bilayer heterostructure and bipolar carrier transporting channels.

transferring ability. [1] Recently, halide perovskites have achieved significant attention for their possessing tunable bandgap, high absorption constant in visible region, and a low-cost solution processibility for optoelectronics, [2][3][4][5][6] such as light-emitting diodes, photodetectors, and solar cells. Due to the fluctuations in hybrid methyl ammonium lead halide (MAPbX 3 ) perovskite and the instability caused by the decomposition of organic components. The conventional 3D perovskites-based photodetectors suffer from unreliable performance such as the current-voltage hysteresis and instability. [7][8][9] An unconventional solution to overcome the above-mentioned confines is to reduce the morphological dimensionality of bulk perovskites into low-dimensional halide perovskites, such as nanocrystals (NCs) for its vigorous chemical stability and tunable optoelectronic capability due to the quantum size effect. [10] Since the report by Protesescu et al., [11] all-inorganic CsPbX 3 (where X is I, Cl, and Br) NCs have gained interest [12][13][14][15] widely and CsPbBr 3 NCs are usually designated for photodetectors because of their high stability, cost-effectiveness, and easy synthesis, as compared with other all-inorganic perovskites. [16] All-inorganic halide perovskites have recently emerged as a promising candidate for new-generation optoelectronics. The device performance of solutionprocessed photodetectors critically depends on the surface morphology and film features, however, the behind mechanism is not clear till now. In this paper, a feasible method for surface-passivating all-inorganic halide perovskites with poly(3-hexylthiophene) (P3HT) as the photoactive layer for field-effect transistor (FET)-based photodetectors is presented, and the underlying mechanisms to enhance device performance are investigated by experimental and simulating study. As the result, a high photoresponsivity of 469 A W −1 with a specific detectivity of 1.34 × 10 14 Jones is obtained under 0.4 mW cm −2 405 nm illumination for FET-based photodetector Au(S&D)/CsPbBr 3 :P3HT/PMMA/ Al(G). This experimental and simulating study shows that the enhanced-performance origins from improving the photogenerated charge carriers transportation and suppressing the dark current through the photodetectors.

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