Enhanced performance of solution-processed all-inorganic halide perovskite photodetectors by using bulk heterojunction and lateral configuration

A high-responsivity CsPbBr3 nanowire photodetector induced by CdS@CdxZn1−xS gradient-alloyed quantum dots

“…5(c). 13,15,28,38,46,[59][60][61]66,67,69,[71][72][73] The detailed performances of related photodetector devices are listed in Table S2 (ESI †). Compared with the most carefully designed individual CsPbBr 3 wire and hybrid photodetectors, the performance of our photodetectors modified with QDs has remarkable advantages.…”

“…The photoelectric conversion efficiency obtained in this work under a 5 V bias voltage is much greater than that of most present CsPbBr 3 -based photodetectors, even at a much higher bias voltage. 13,38,[59][60][61][64][65][66][67][68][69][70][71][72][73][74][75] In addition, the detectivity (D*) of the CdS@Cd x Zn 1Àx S gradient-alloyed QD-decorated CsPbBr 3 photodetector is increased to 1.62 Â 10 13 Jones, and the response time is reduced to 330 ms. In consequence, a physical model based on band energy theory was developed to illustrate the physical mechanism of these unique enhancement phenomena.…”

Designing of benzofuran‐based monomers for photodetectors through similarity analysis and library enumeration

“…Photodetectors perform this conversion with ultra‐high speed and efficiency 1,2 . In a modern technological world, photodetectors find enormous applications in all the science fields, which involve photodetection processes such as sensing of images, optical communication, monitoring of environmental processes, and chemical and biological detection 3 …”

“…1,2 In a modern technological world, photodetectors find enormous applications in all the science fields, which involve photodetection processes such as sensing of images, optical communication, monitoring of environmental processes, and chemical and biological detection. 3 Initially, most of the detectors were composed of inorganic semiconducting materials such as silicon or germanium and their compounds. 4 The characteristic features of these inorganic materials such as higher stability, rapid response time, high bandwidth, a high charge-carrying capability, and low binding and excitation energy enable them to be widely used in optically sensitive devices.…”

High-Responsivity Vis–NIR Photodetector Based on a Ag2S/CsPbBr3 Heterojunction

“…QDs have gained significant interest in optoelectronic devices such as photodetectors, solar cells, and energy storage devices . PbS QDs have great potential in the field of high-performance PDs due to their low-cost solution synthesis method, high quantum yield, high optical absorption coefficient, and high carrier mobility. − PbS QDs are used in IR PDs due to their tunable band-gap energies and excellent optical properties, but they usually contain toxic elements and are unable to cover the vis band. − Ag 2 S is a direct band-gap semiconductor (0.9–1.1 eV) with a vis–NIR spectral range. It has good chemical stability and optical properties.…”