IgG4-RD is a systemic inflammatory and sclerosing disease. Parotid and lacrimal involvement (formerly called Mikulicz's disease), lymphadenopathy and pancreatitis are the most common manifestations. Patients with IgG4-RD showed favourable responses to treatment with glucocorticoids and immunosuppressive agents.

Tungsten disulfide (WS 2 ), as a typical metal dichalcogenides (TMDs), has aroused keen research interests in photodetection. Here, field effect phototransistors (FE p Ts) based on heterojunction between monolayer WS 2 and PbS colloidal quantum dots are demonstrated to show high photoresponsivity (up to ∼14 A/W), wide electric bandwidth (∼396 Hz), and excellent stability. Meanwhile, the devices exhibit fast photoresponse times of ∼153 μs (rise time) and ∼226 μs (fall time) due to the assistance of heterojunction on the transfer of photoexcitons. Therefore, excellent device performances strongly underscore monolayer WS 2 −PbS quantum dot as a promising material for future photoelectronic applications.

Organic lead halide perovskites have received a huge amount of interest since emergence, because of tremendous potential applications in optoelectronic devices. Here field effect phototransistors (FETs) based on CHNHPbI perovskite/PbSe colloidal quantum dot heterostructure are demonstrated. The high light absorption and optoelectric conversion efficiency, due to the combination of perovskite and quantum dots, maintain the responsivities in a high level, especially at 460 nm up to 1.2 A/W. The phototransistor exhibits bipolar behaviors, and the carrier mobilities are determined to be 0.147 cmVs for holes and 0.16 cmVs for electrons. The device has a wide spectral response spectrum ranging from 300 to 1500 nm. A short photoresponse time is less than 3 ms due to the assistance of heterojunction on the transfer of photoexcitons. The excellent performances presented in the device especially emphasize the CHNHPbI perovskite-PbSe quantum dot as a promising material for future photoelectronic applications.

All‐inorganic cesium lead halide perovskite nanocrystals have emerged as attractive optoelectronic nanomaterials due to their stabilities and highly efficient photoluminescence. High‐sensitivity photodetection covering a large spectral range from ultraviolet to near‐infrared is dominated by phototransistors. To overcome existing limitations in sensitivity and cost of state‐of‐the‐art systems, new‐style device structures and composite material systems are needed with low‐cost fabrication and high performance. Here, field‐effect phototransistors (FEpTs) based on CsPbBr3–PbS colloidal quantum dot heterostructure dominate to obtain a wide response spectral range and high performance. The large spectral detection spectrum is from 400 to 1500 nm similar to PbS quantum dots' response. It is worth mentioning that the device shows responsivity up to 4.5 × 105 A W−1, which is three orders of magnitude higher than the counterpart of individual material‐based devices. Furthermore, other high performance of hybrid CsPbBr3–PbS FEpTs including a short photoresponse time (less than 10 ms) is ascribed to the assistance of heterojunction on the transfer of photoexcitons. The solution‐based fabrication process and excellent device performance strongly underscore CsPbBr3–PbS quantum dot as a promising material for future photoelectronic applications.

We fabricated a vertical field effect phototransistor with Au/Ag nanowires as the transparent source electrode and with vertically stacked layers of poly(3-hexylthiophene) (120 nm) and lead sulfide quantum dots (380 nm), which formed heterojunctions. The built-in electric field in the layered heterojunction aids the separation of photoinduced excitons, while the short channel enables efficient carrier transport across the active region. Both of these benefits enable a high photoperformance and fast photoresponse. This vertical phototransistor can be operated at room temperature with a low operation voltage of −1 V and is therefore energy-efficient. Further, it has a wide response spectrum from 400 to 2100 nm, a high photoresponsivity of more than 9 × 10 4 AW −1 , and a high detectivity of up to 2 × 10 13 Jones (cm Hz 1/2 W −1 ) under infrared illumination. Additionally, this vertical phototransistor had a response time of 9 ms, which is faster than a previously reported lateral field effect phototransistor based on poly(3hexylthiophene)/lead sulfide quantum dots. The vertical architecture combined with the layered heterojunction approach provides a new, facile way of fabricating high performance devices.

Here, vertical field effect phototransistors (VFEPTs) based on lead selenide colloidal quantum dots (PbSe CQDs) for infrared photo detection were investigated, using Au/Ag nanowires as the source transparent electrode. VFEPTs have the advantage of easy fabrication of ultrashort channel length devices, as the channel length is simply determined here by the PbSe CQDs active layer's thickness (260 nm). In ultrashort channels, photo-excited carriers quickly (in nanoseconds) transfer to the drain. As soon as a hole (electron) reaches the drain, a hole (electron) is replenished from the source. Accordingly, multiple holes circulate in the ultrashort channel following a single electron-hole photo generation. As a result, the device exhibits superior photoconductive properties over the lateral structure. PbSe CQD VFEPTs show ambipolar operation under low voltage down to one volt at room temperature. Moreover, high photo responsivity and high specific detectivity of 2 × 10(4) A W(-1) and 7 × 10(12) Jones are also achieved in the devices under 808 nm laser illumination. The transparent electrode-based near infrared VFEPTs prepared through this self-assembly solution process show promise for applications in electronics and photoelectronics.

A novel integrable modulator consisting of a polarization modulator and a polarizer is proposed for constructing a high-performance analog photonic link. By adjusting a polarization controller placed before the modulator, both amplitude modulation and phase modulation with adjustable ratio between them are implemented. This feature is used to shift the peak of the frequency response of a dispersive link to any desired frequency, so the dispersion-induced power fading around the frequency is compensated. A proof-of-concept experiment is performed. The compensation of the dispersion-induced power fading in the proposed analog photonic link increases the spur-free dynamic range as large as 12.5 dB.

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