Hybrid Nanocomposites of All‐Inorganic Halide Perovskites with Polymers for High‐Performance Field‐Effect‐Transistor‐Based Photodetectors: An Experimental and Simulation Study

Abstract

transferring ability. [1] Recently, halide perovskites have achieved significant attention for their possessing tunable bandgap, high absorption constant in visible region, and a low-cost solution processibility for optoelectronics, [2][3][4][5][6] such as light-emitting diodes, photodetectors, and solar cells. Due to the fluctuations in hybrid methyl ammonium lead halide (MAPbX 3 ) perovskite and the instability caused by the decomposition of organic components. The conventional 3D perovskites-based photodetectors suffer from unreliable performance such as the current-voltage hysteresis and instability. [7][8][9] An unconventional solution to overcome the above-mentioned confines is to reduce the morphological dimensionality of bulk perovskites into low-dimensional halide perovskites, such as nanocrystals (NCs) for its vigorous chemical stability and tunable optoelectronic capability due to the quantum size effect. [10] Since the report by Protesescu et al., [11] all-inorganic CsPbX 3 (where X is I, Cl, and Br) NCs have gained interest [12][13][14][15] widely and CsPbBr 3 NCs are usually designated for photodetectors because of their high stability, cost-effectiveness, and easy synthesis, as compared with other all-inorganic perovskites. [16] All-inorganic halide perovskites have recently emerged as a promising candidate for new-generation optoelectronics. The device performance of solutionprocessed photodetectors critically depends on the surface morphology and film features, however, the behind mechanism is not clear till now. In this paper, a feasible method for surface-passivating all-inorganic halide perovskites with poly(3-hexylthiophene) (P3HT) as the photoactive layer for field-effect transistor (FET)-based photodetectors is presented, and the underlying mechanisms to enhance device performance are investigated by experimental and simulating study. As the result, a high photoresponsivity of 469 A W −1 with a specific detectivity of 1.34 × 10 14 Jones is obtained under 0.4 mW cm −2 405 nm illumination for FET-based photodetector Au(S&D)/CsPbBr 3 :P3HT/PMMA/ Al(G). This experimental and simulating study shows that the enhanced-performance origins from improving the photogenerated charge carriers transportation and suppressing the dark current through the photodetectors.

Ultrasensitive and Self‐Powered SnSe/Ge Heterojunction Photodetector Driven by Spontaneously Interfacial Excitation Transfer of Carriers

“…It is also an important method to confirm the conduction type of a semiconductor material. [47,48] The detailed transfer data for the two layers were shown in the Figure S1, Supporting Information. The characterization results indicate that the naturally growing SnSe film has the p-type conductance, while the Ge wafer possesses the n-type conductance.…”

Two Bulk-Heterojunctions Made of Blended Hybrid Nanocomposites for High-Performance Broadband, Self-Driven Photodetectors

“…Recently, the hybrid nanocomposites of CsPbBr 3 with poly 3-hexylthiophene (P3HT) has been investigated for a compact surface-passivated photoactive film of CsPbBr 3 :P3HT with enhanced photogenerated carriers mobility and conductivity. 24 As a wellknown p-type polymer, P3HT is the most suitable candidate among other polymers and is widely used as hole-transporting material in organic optoelectronic devices due to its good crystallinity and more regioregular morphology, 25,26 its high solubility in various solutions and easy conjugating with other solution-processed materials. On the other hand, ZnO is a well-known semiconductor material with high electron mobility, and it is widely used as electron-transporting layer (ETL) in photovoltaic devices.…”

“…One of the most appropriate approaches to improve the photostability, carrier mobility, absorption and stability of the device is to synthesize BHJs of both (or more) materials with other high mobility semiconducting materials, in this way, to increase the carriers mobility and conductivity of the individual PbSe-QDs and CsPbBr 3 NC. Recently, the hybrid nanocomposites of CsPbBr 3 with poly 3-hexylthiophene (P3HT) has been investigated for a compact surface-passivated photoactive film of CsPbBr 3 :P3HT with enhanced photogenerated carriers mobility and conductivity . As a well-known p-type polymer, P3HT is the most suitable candidate among other polymers and is widely used as hole-transporting material in organic optoelectronic devices due to its good crystallinity and more regioregular morphology, , its high solubility in various solutions and easy conjugating with other solution-processed materials.…”

Detached Vertical (Al,Ga)N Nanowires to Realize the Flexible Ultraviolet Photodetector with High Ultraviolet/Visible Reject Ratio and Detectivity

“…Moreover, in the bending conditions shown in Figure 6e,f, we propose that the slight change of photocurrent is the result of the joint action of the following two reasons. 1) According to Figure 5e, the slight reduction of the potential barrier of PD‐C (Δ ϕ ) can assist the flow of carriers after their dissociation, [ 73 ] leading to collecting little more electrons; and 2) The reduction of barrier weakens the built‐in electric field, resulting in reducing the separation, collection, and transport of photogenerated electron–hole pairs in the depletion region. As a result, the bending stress has only a limited effect on the photocurrent density and response speed.…”