Two Bulk-Heterojunctions Made of Blended Hybrid Nanocomposites for High-Performance Broadband, Self-Driven Photodetectors

Abstract

Heterojunctions based on low dimensional semiconducting materials are one of the most promising alternatives for next-generation optoelectronic devices. By choosing different dopants in high-quality semiconducting nanomaterials, p-n junctions can be realized with tailored energy band alignments. Also, p-n bulkheterojunctions (BHJs) based photodetectors have shown high detectivity because of the suppressed dark current and high photocurrent, which are due to the larger built-in electric potential within the depletion region and can significantly improve the quantum efficiency by reducing the carriers' recombination. In this work, PbSe quantum dots (QDs) blended with ZnO nanocrystals (NCs) were used as the n-type layer, while CsPbBr 3 NCs doped with P3HT were used as the p-type layer; as a result, a p-n BHJ was formed with a strong built-in electric field. Consequently, such a kind of p-n BHJ photodetector ITO/ZnO/PbSe:ZnO/CsPbBr 3 :P3HT/P3HT/Au showed a high ON/OFF current ratio of 10 5 with a photoresponsivity of 1.4 A/W and specific detectivity of 6.59 × 10 14 Jones under 0.1 mW/cm 2 532 nm illumination in self-driven mode. Moreover, the simulation performed by TCAD also agrees well with our experimental results, and the underlying physical mechanism for enhanced performance is discussed in detail for this type of p-n BHJ photodetector.

An ultrafast and self-powered MoSxSe2−x/Si photodetector with high light-trapping structures and a SiOx interface layer

“…2(d), the MoS x Se 2− x nanosheet presents four additional peaks at 161.52, 162.92, 164.12 and 167.32 eV attributed to Se 3p 3/2 , S 2p 1/2 , S 2p 3/2 and Se 3p 1/2 , respectively, which may indicate possible overlaps contributing to S 2− and Se. 2–45 The S 2s peak was also observed at the core of 227.12 eV. Moreover, the XPS spectra of the MoS 2 are shown in Fig.…”

“…The ability of PDs to achieve self-driven detection is largely attributed to this unique structural feature. 23,24 Additionally, the research team also developed a variety of strategies for enhancing the performance of optoelectronic devices, such as software simulation 25 and a suppressed surface. 26 A V 2 O 5 /rGO hybrid PD was prepared by a hydrothermal method achieving good performance due to the carrier generation mechanisms increasing the responsivity and detectivity.…”

High‐Performance Self‐Powered Broadband Schottky Junction Photodetector Based on Graphene‐Silicon van der Waals Heterostructure

“…The R can be defined as the ratio of photocurrent to the intensity of illumination power, and it is expressed asWhere is the intensity of the illumination. [ 15,44 ] The responsivity of the device was measured for different wavelengths, i.e., 405, 532, 1,050, and 1,550 nm which is given in Figure 4 a. It was found that the value of the responsivity for the 405 nm wavelength is 96 mA W −1 .…”

Structured hybrid photodetectors using confined conducting polymer nanochannels

“…The improved understanding of the physics and chemistry of the transport mechanisms in perovskites has led to rapid enhancement of the device performances with striking progress. 1–11 Traditional photodetectors that convert optical signals to electrical signals are primarily based on InGaAs, GaN, and Si that require elaborate film growth techniques. 12–21 More recently solution processible semiconductor-based hybrid perovskites and organic polymers have shown promise in applications like optical communications, imaging, chemical and biological sensing.…”