This paper describes the synthesis of Cu(ii), Co(ii) and Ni(ii) catalysts immobilized on imine-functionalized silica gel through a 3-aminopropyltriethoxysilane linker.
All‐inorganic lead halide perovskites with good surface morphology show substantial prospect for optoelectronic devices. However, the anion exchange of coordinated alkylamine ligands (e.g., oleic acid and oleylamine) can detach ligands and induce more interface trap sites, subsequently to reduce device performance. In this paper, therefore, a simple solution‐processed route is presented to synthesize quasi coreshell CsPbBr3formamidinium iodide (FAI = CH(NH2)2I) colloidal quantum dots (CQDs), and then it is applied as the active layer for photodetectors by finely controlling the ligands exchange. The presence of FAI = CH(NH2)2I on CsPbBr3 is confirmed by Fourier transform infrared spectroscopy. As a result, the photodetector ITO/ZnO (100 nm)/CsPbBr3 (150 nm)/Au show an enhanced specific detectivity over 1013 Jones with a responsivity of 19 A W1 under 3 mW cm2 405 nm illumination at 1.5 V. The experimental data show that the enhanced device performance is due to the improved crystallinity and less surface defects of CsPbBr3 CQDs, as the result of less alkylamine ligands is detached during its FAI passivation, thus the charge carriers' mobility of the film is improved. Therefore, it provides a promising way for high‐performance solution‐processed all‐inorganic CsPbBr3 based optoelectronic devices.
Heterostructures composed of nano-/micro-junctions, combining the excellent photon harvesting properties of nano-systems and the ultrafast carrier transfer of micro-systems, have a promising role in high-performance photodetectors. In this paper, a highly-sensitive trilayer self-powered perovskite-based photodetector ITO/ZnO (70 nm)/CdS (150 nm)/CsPbBr3 (200 nm)/Au, in which the CdS nanorods (NRs) layer is sandwiched between a ZnO/CsPbBr3 interface to reduce the interfacial charge carriers’ recombination and the charge transport resistance, is presented. Due to the strong built-in potential and the internal driving electric-field, an ultra-high On/Off current ratio of 106 with a responsivity of 86 mA W−1 and a specific detectivity of 6.2 × 1011 Jones was obtained at zero bias under 85 µW cm−2 405 nm illumination and its rise/decay time at zero bias is 0.3/0.25 s. Therefore, the enhanced device performance strongly suggests the great potential of such a trilayer heterojunction device for use in high-performance perovskite photodetectors.
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