Exploiting High-Density Earth-Abundant Kesterite Quantum Wells for Next-Generation PV Technology

Chandrasekar, P. V.; Palaniswamy, Sandeep Kumar; Routray, Soumyaranjan

doi:10.1109/ted.2021.3090750

Cited by 16 publications

(9 citation statements)

References 29 publications

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“…Furthermore, Eq. (17) is expected to help model the defect density in graded-bandgap and quantum-well-based CZTSSe thin-film solar cells 45 , 46 , 51 , 52 and better predict optimal designs for experimentalists.…”

Section: Resultsmentioning

confidence: 99%

“…But in either case, the process is dictated by the defect density chosen for the simulation, 42 and an inadequate choice can lead to a poor prediction of the device performance. With increased interest in bandgap-graded and quantum-well CIGS and CZTSSe thin-film PVSCs, 6 , 17 , 18 , 43 – 52 a knowledge of defect density and carrier lifetimes in relation to Eg (and therefore ξ) is a must.…”

Section: Introductionmentioning

confidence: 99%

“…Higher gallium content (i.e., higher ξ) leads to higher Nnormalf and lower τnormaln, and some nonlinear fits of Nnormalf to ξ have been proposed 25 , 31 . However, a systematic study of the performance parameters of a solar cell with a homogeneous CIGS layer versus ξ can establish Nnormalf and τnormaln for simulating graded-bandgap 46 – 49 and quantum-well 50 – 52 CIGS solar cells.…”

Section: Introductionmentioning

confidence: 99%

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Effects of defect density, minority carrier lifetime, doping density, and absorber-layer thickness in CIGS and CZTSSe thin-film solar cells

et al. 2023

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.Detailed optoelectronic simulations of thin-film photovoltaic solar cells (PVSCs) with a homogeneous photon-absorber layer made of with CIGS or CZTSSe were carried out to determine the effects of defect density, minority carrier lifetime, doping density, composition (i.e., bandgap energy), and absorber-layer thickness on solar-cell performance. The transfer-matrix method was used to calculate the electron-hole-pair (EHP) generation rate, and a one-dimensional drift-diffusion model was used to determine the EHP recombination rate, open-circuit voltage, short-circuit current density, power-conversion efficiency, and fill factor. Through a comparison of limited experimental data and simulation results, we formulated expressions for the defect density in terms of the composition parameter of either CIGS or CZTSSe. All performance parameters of the thin-films PVSCs were thereby shown to be obtainable from the bulk material-response parameters of the semiconductor, with the influence of surface defects being small enough to be ignored. Furthermore, unrealistic values of the defect density (equivalently, minority carrier lifetime) will deliver unreliable predictions of the solar-cell performance. The derived expressions should guide fellow researchers in simulating the graded-bandgap and quantum-well-based PVSCs.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Effects of defect density, minority carrier lifetime, doping density, and absorber-layer thickness in CIGS and CZTSSe thin-film solar cells

et al. 2023

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“…Now-a-days, there is a rapid demand for production of clean and sustainable alternative and everlasting energy sources [1]. Amongst such technologies, energy generation from photovoltaic technology is the most promising and rapidly developing method of capturing the surging demand of renewable energy for humanity [2,3]. Copperbased chalcogenide compounds, such as Cu 2 ZnSnS 4 (CZTS) and Cu(InGa)Se 2 (CIGS) have recently received much attention because of their, remarkable light absorption properties, low cost, earth-abundant, and environmental protection [4][5][6].…”

Section: Introductionmentioning

confidence: 99%

Analysis of Loss Mechanisms in CZGSe Thin-Film Kesterite Solar Cells: A Statistical Distribution for Defects and Traps

A¹,

Routray²,

Massoud³

2022

ECS J. Solid State Sci. Technol.

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Kesterite materials are popular for low-cost photovoltaic and opto-electronic applications. Currently, the efficiency of kesterite-based CZTSe material is only 12% due to the poor quality of the material. As an alternative, substituting Sn with Ge as Cu-Zn-Ge-Se (CZGSe) not only enhances the optical properties of materials but also improves the performance of solar cells. The carrier dynamics of the device were examined with variation of different parameters like doping. The worst-case behavior of the device was also examined by adding different loss mechanisms such as deep defects and traps. A remarkable efficiency of 19% and worst case efficiency of 11% could achieved from the proposed device

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“…[9][10][11][12][13][14][15][16][17] In addition to this, incorporation of nanostructure with carrier confinement increases the overall performance of solar cell as compared to bulk solar cell. [18][19][20][21] On the other hand, the performance of CFTS and CFTSe is less explored. The material possesses the capability to reduce defects and traps as compared to CZTS.…”

mentioning

confidence: 99%

Retrieving Carrier Population and Collection Efficiency in CFTS/CFTSe‐Based Solar Cell Using Low‐Dimensional Multiple Nanostructures

Varku

Pradhan

Routray

2022

Physica Status Solidi (a)

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In recent times, research communities are working on device to harvest solar energy at low cost. Copper‐based quaternary chalcogenides are one among the leading materials in the field. Herein, the electrical and optical performance of quantum well embedded Cu 2 - Fe - Sn - normalS 4 (CFTS) solar cell is investigated in detail. Multiple quantum wells (MQWs) with different bandgaps ensure wider photon absorption of solar spectrum. Hence, MQWs made up of CFTSe/CFTS are incorporated with a variation in well size and well numbers. All the electrical parameters and optical parameters such as power conversion efficiency, quantum efficiency, and its dependence on carrier quantization are discussed in detail. More than 80% external quantum efficiency with just 2 QWs shows the efficient carrier generation and collection of the proposed structure. Device with 10 QWs of size 18/10 nm of CFTSe/CFTS can achieve remarkable efficiency of 21% with good trade‐off between J sc and fill factor.

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Exploiting High-Density Earth-Abundant Kesterite Quantum Wells for Next-Generation PV Technology

Cited by 16 publications

References 29 publications

Effects of defect density, minority carrier lifetime, doping density, and absorber-layer thickness in CIGS and CZTSSe thin-film solar cells

Effects of defect density, minority carrier lifetime, doping density, and absorber-layer thickness in CIGS and CZTSSe thin-film solar cells

Analysis of Loss Mechanisms in CZGSe Thin-Film Kesterite Solar Cells: A Statistical Distribution for Defects and Traps

Retrieving Carrier Population and Collection Efficiency in CFTS/CFTSe‐Based Solar Cell Using Low‐Dimensional Multiple Nanostructures

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