All-solution-processed UV-IR broadband trilayer photodetectors with CsPbBr₃ colloidal nanocrystals as carriers-extracting layer

Abstract

Colloidal quantum dots (CQDs) are very promising nanomaterials for optoelectronics due to their tunable bandgap and quantum confinement effect. All-inorganic CsPbX 3 (X=Br, Cl and I) perovskite nanocrystals (NCs) have attracted enormous interests owing to their promising and exciting applications in photovoltaic devices. In this paper, all-solution-processed UV-IR broadband trilayer photodetectors ITO/ZnO/PbS/CsPbBr 3 /Au and ITO/ZnO/CsPbBr 3 /PbS/Au with high performance were presented. The role of CsPbBr 3 QDs layer as the carriers-extracting layer in the trilayer devices was discussed. As compared with bilayer device ITO/ZnO/PbS/Au, both the dark currents and photocurrents under illumination from trilayer photodetectors are enhanced, but the trilayer photodetector ITO/ZnO(80 nm)/PbS(150 nm)/CsPbBr 3 (50 nm)/Au showed a maximum specific detectivity (D * ) of 8.3×10 12 Jones with a responsivity (R) of 35 A W −1 under 1.6 mW cm −2 980 nm illumination. However, another trilayer photodetector ITO/ZnO(80 nm)/CsPbBr 3 (50 nm)/ PbS(150 nm)/Au showed a maximum D * of 1.73×10 12 Jones with a R of 5.31 A W −1 under 6.8 mW cm −2 405 nm illumination. Further, the underlying mechanism for the enhanced performance of trilayer photodetectors was discussed. Thus, this strategy of all-solution-processed heterojunction configuration paves a facile way for broadband photodetectors with high performance.

CsPbBr3 QDs Modified Vertically Layered MoS2/Si Heterojunction for Fast UV–vis–NIR Spectrum Flexible Photodetectors

“…Besides, CsPbBr 3 QDs can passivate the defects of MoS 2 , reduce charge trapping and accelerates charge extraction. [ 19 ] A relatively smaller enhancement of photoresponse under 671 nm laser would be generated than 532 nm laser due to the weaker light absorption of the CsPbBr 3 QDs at 671 nm. [ 9c ] According to the literature, the CsPbBr 3 QDs possess the two‐photon absorption at around 800 nm.…”

Surface Engineering of All‐Inorganic Perovskite Quantum Dots with Quasi Core−Shell Technique for High‐Performance Photodetectors

“…The rise time (τ r ) and decay time (τ d ) are the current conversion time from the minimum current value to maximum value (from 10% to 90%) and vice versa, respectively. [ 38 ] The temporal response values are summarized in Table 1. From here, one can see that the device C has fast response as compared with others.…”

Flexible Self‐Powered Photoelectrochemical Photodetector with Ultrahigh Detectivity, Ultraviolet/Visible Reject Ratio, Stability, and a Quasi‐Invisible Functionality Based on Lift‐Off Vertical (Al,Ga)N Nanowires

“…The energy band details of ITO refer to ref. [37] As shown in Figure 5d,e, the stress can develop the piezoelectric charges at the ITO/GaN interface when bending GaN I section, which could induce the electric filed that bends the energy bands. [ 38 ] Hence, the bent energy band could slow down the carrier transport, resulting in the lower photocurrent density under bending (Figure 4f).…”