CsPbBr<sub>3</sub> QDs Modified Vertically Layered MoS<sub>2</sub>/Si Heterojunction for Fast UV–vis–NIR Spectrum Flexible Photodetectors

Guo, Linjuan; Gu, Yansong; Yang, Zheng; Tian, Shuo; San, Xingyuan; Liu, Jihong; Gao, Linjie; Qiao, Shuang; Wang, Shufang

doi:10.1002/admi.202002231

Cited by 17 publications

(9 citation statements)

References 48 publications

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“…The topography information on the different OSC and perovskite films can be found in Figures S1 and S2 including atomic force microscopy (AFM) and SEM images, indicating that the surface of the prepared films is continuous and uniform, which meets the standards of photodetectors. The UV–vis absorption spectra of both the perovskite and OSC films are shown in Figure c, and the absorption peaks of CsPbCl 3 , CsPbBr 3 , C8-BTBT, and pentacene appear around 420, 535, 320, and 710 nm, respectively, which are consistent with previous findings, and the relevant optical band gaps could be extracted from this figure. − …”

Section: Resultssupporting

confidence: 89%

Flexible Perovskite and Organic Semiconductor Heterojunction Devices for Tunable Band-Selective Photodetection

Zhang

Chen

Liu

et al. 2022

ACS Appl. Electron. Mater.

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Filter-free band-selective photodetectors with tunable band edges possess extensive applications in smart sensors, artificial intelligence, the internet of everything, and so forth. However, such photodetectors operated with the charge collection narrowing effect require a thick active layer over millimeters, leading to rather a large device size, high material cost, and limited mechanical flexibility. In this work, we report a flexible thin-film perovskite and organic semiconductor (OSC) heterojunction device, which can achieve adjustable band-selective photodetection by utilizing the easy tunability of the perovskite band gap. First, heterojunction photodiodes with only two active layers of perovskites and OSCs are fabricated, in which the perovskite contributes to light absorption and rectification characteristics simultaneously. The fundamental device operation mechanism is investigated by combining the band alignments of the heterojunctions and their potential distributions observed with Kelvin probe force microscopy. It uncovers that the presence of built-in electric fields in the heterojunctions caused by moderate band alignments and appropriate difference in hole and electron concentrations between the perovskites and the OSCs is significant for the properties of the photodiodes. The resultant photodiodes exhibit a high rectification ratio of up to 10 3 , decent photodetection performance, and mechanical flexibility. Furthermore, photodetectors based on perovskite/OSC/perovskite stack heterojunctions can realize the functions of filterless band-selective photodetection in a single device, and the band edges in the photodetection can be modulated by tuning the perovskite band gap. Therefore, this work provides flexible thin-film photodiodes with the potential of miniaturization and low-cost fabrication and demonstrates tunable band-selective photodetection for advanced applications.

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Section: Resultssupporting

confidence: 89%

Flexible Perovskite and Organic Semiconductor Heterojunction Devices for Tunable Band-Selective Photodetection

Zhang

Chen

Liu

et al. 2022

ACS Appl. Electron. Mater.

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“…The R and D * for WSe 2 /PbS QDs increased by 10 4 [26]. The R for MoS 2 /CsPbBr 3 QDs is about 0.9-1.02 A W −1 and the [43]. It can be concluded that the photoelectronic performance of our sample has been greatly improved after the QDs were coated, especially the photoresponse of the device in the near infrared region.…”

Section: Resultsmentioning

confidence: 69%

Energy transfer in hybrid 0D-CdSe quantum dot/2D-WSe₂ near-infrared photodetectors

Meng¹,

Zhang²,

Mo³

et al. 2022

J. Phys. D: Appl. Phys.

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The quantum dots (QDs) modification of two-dimensional (2D) materials is an effective and convenient way to improve their optoelectronic properties, due to the energy transfer at the interface. In this work, we have studied the influence of the CdSe QDs on the physical properties of the 2D WSe2. After the modification of CdSe QDs, the energy transfer is observed in heterostructures which confirmed by the PL and Raman results. The WSe2/CdSe QDs heterostructure based phototransistors exhibit an ambipolar characteristic, owing to the typical type-Ⅱ band alignment. Under the illumination of 638 nm light, the performance of the device significantly improved compared with the WSe2 based device: the responsivity increased from 3.6 A/W to 9.27 A/W; the detectivity increased from 7.73×109 Jones to 4.38× 1010 Jones. Meanwhile, the devices exhibit good photoresponse in a wide spectral range from visible light to near-infrared light. Our work suggests that hybridizing 0D QDs and 2D material is a suitable and effective way to enhance the photodetection ability of the device and realize the ambipolar photodetection. It is a potential way to build multifunctional optoelectronic devices with broadband and high photoresponse performances.

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“…All-inorganic perovskite outperforms organic-inorganic hybrid perovskite in terms of ambient stability which is beneficial for real applications 260,261 . For example, all-inorganic cesium lead halides represent an emerging class of materials with excellent properties required for PDs such as high carrier mobility, long carrier diffusion length, and excellent visible light absorption 190,262 . Besides, the optical properties of CsPbX 3 nanocrystals (NCs) depend on their size and composition 190,260 .…”

Section: Cspbbr 3 /Tmd Heterostructuresmentioning

confidence: 99%

Perovskite-transition metal dichalcogenides heterostructures: recent advances and future perspectives

Elbanna¹,

Chaykun²,

Lekina³

et al. 2022

OES

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Transition metal dichalcogenides (TMDs) and perovskites are among the most attractive and widely investigated semiconductors in the recent decade. They are promising materials for various applications, such as photodetection, solar energy harvesting, light emission, and many others. Combining these materials to form heterostructures can enrich the already fascinating properties and bring up new phenomena and opportunities. Work in this field is growing rapidly in both fundamental studies and device applications. Here, we review the recent findings in the perovskite-TMD heterostructures and give our perspectives on the future development of this promising field. The fundamental properties of the perovskites, TMDs, and their heterostructures are discussed first, followed by a summary of the synthesis methods of the perovskites and TMDs and the approaches to obtain high-quality interfaces. Particular attention is paid to the TMD-perovskite heterostructures that have been applied in solar cells and photodetectors with notable performance improvement. Finally through our analysis, we propose an outline on further fundamental studies and the promising applications of perovskite-TMD heterostructures.

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CsPbBr₃ QDs Modified Vertically Layered MoS₂/Si Heterojunction for Fast UV–vis–NIR Spectrum Flexible Photodetectors

Cited by 17 publications

References 48 publications

Flexible Perovskite and Organic Semiconductor Heterojunction Devices for Tunable Band-Selective Photodetection

Flexible Perovskite and Organic Semiconductor Heterojunction Devices for Tunable Band-Selective Photodetection

Energy transfer in hybrid 0D-CdSe quantum dot/2D-WSe₂ near-infrared photodetectors

Perovskite-transition metal dichalcogenides heterostructures: recent advances and future perspectives

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CsPbBr3 QDs Modified Vertically Layered MoS2/Si Heterojunction for Fast UV–vis–NIR Spectrum Flexible Photodetectors

Cited by 17 publications

References 48 publications

Flexible Perovskite and Organic Semiconductor Heterojunction Devices for Tunable Band-Selective Photodetection

Flexible Perovskite and Organic Semiconductor Heterojunction Devices for Tunable Band-Selective Photodetection

Energy transfer in hybrid 0D-CdSe quantum dot/2D-WSe2 near-infrared photodetectors

Perovskite-transition metal dichalcogenides heterostructures: recent advances and future perspectives

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CsPbBr₃ QDs Modified Vertically Layered MoS₂/Si Heterojunction for Fast UV–vis–NIR Spectrum Flexible Photodetectors

Energy transfer in hybrid 0D-CdSe quantum dot/2D-WSe₂ near-infrared photodetectors