Impact of high-k gate dielectric on analog and RF performance of nanoscale DG-MOSFET

Temperature dependence inflection point in Ultra-Thin Si directly on Insulator (SDOI) MOSFETs: An influence to key performance metrics

“…1. In this work, we assume the equivalent oxide thickness (EOT) of the gate dielectric as 1.1 nm [20]. The silicon body thickness (t Si ) is 10 nm.…”

Analytical surface potential modeling and simulation of junction-less double gate (JLDG) MOSFET for ultra low-power analog/RF circuits

“…The extraction of C gs and C gd has been done and the intrinsic capacitances between each gate-source and gate-drain pair have been calculated using 1 MHz frequency for a DC ramp voltage varying from 0 to 1 V with a step size of 0.05 V [20][21].…”

“…Trans-conductance (g m ), output conductance (g d ), early voltage (V EA ), intrinsic gain (A V ) and trans-conductance generation factor (TGF) are the key analog FOMs. The FOMs for RF performance are Cut-off frequency (f T ), trans-conductance frequency product (TFP), gain frequency product (GFP) and gain trans-conductance frequency product (GTFP), they represent a tradeoff between power and bandwidth, and these parameters are also used to design high speed communication circuits [20][21][22]. The present research work provides a platform for the study of analog and RF FOMs in the sub-micron regime [23][24][25][26][27][28].…”

Impact of barrier thickness on Analog, RF and Linearity performance of nanoscale DG heterostructure MOSFET

“…InGaAs is being intensively studied as one of the semiconducting materials that may replace Si in the transistor channel at or beyond the 10-nm CMOS logic technology node [3, 7, 10]. Many researchers have reported digital, RF & analog performance of hetero-structure DG MOSFET [4][5][6][7][8][9][10][11][12]. Many III-V material based heterostucture MOSFET have been proposed and compared with their silicon-based counterpart [1].…”

“…It is worth mentioning that the thickness of SiO 2 as gate dielectric material has reached the point where the direct tunneling mostly increases the leakage current, affecting the circuit operation. To overcome this problem, high-k dielectrics have been introduced [11]. Many candidates of possible high-k gate dielectrics have been suggested to replace SiO 2 including Hafnium based oxides HfO 2 [11].…”