Now a days FinFETs integrated into complex circuit applications can fulfill the demand of smartphones and tablets for better performance and make chips that can compute faster. This work studies the impact of HFin and WFin variations on various performance matrices including static as well dynamic figures of merit (FOMs). With the help of Aspect Ratio (WFin/HFin). The device is branched into three parts i.e., FinFET, Trigate, and Planar MOSFET. This unique report is a presentation of a detailed analysis about the impact of fin height (HFin) and width (WFin) on various performances including the DC as well as AC figures of merit (FOMs). The static or low frequency performances like threshold voltage (Vth), on current (Ion), off current (Ioff), power dissipation, transconductance (gm), output conductance (gd), transconductance generation factor (TGF=gm/ID), early voltage (VEA), gain (AV) and dynamic or high frequency performances as gate capacitance (Cgg), cutoff frequency (fT), output resistance (R0), intrinsic delay are systematically presented with the variation of device geometry parameters. The results presented in this report can be of great help to device engineers in designing 3-D devices as per their requirement.A 1536-125X (c)
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