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We provide an analysis of contemporary multilayer optics for extreme ultraviolet (EUV) solar astronomy in the wavelength ranges: λ=12.9-13.3  nm, λ=17-21  nm, λ=28-33  nm, and λ=58.4  nm. We found new material pairs, which will make new spaceborne experiments possible due to the high reflection efficiencies, spectral resolution, and long-term stabilities of the proposed multilayer coatings. In the spectral range λ=13  nm, Mo/Be multilayer mirrors were shown to demonstrate a better ratio of reflection efficiency and spectral resolution compared with the commonly used Mo/Si. In the spectral range λ=17-21  nm, a new multilayer structure Al/Si was proposed, which had higher spectral resolution along with comparable reflection efficiency compared with the commonly used Al/Zr multilayer structures. In the spectral range λ=30  nm, the Si/B₄C/Mg/Cr multilayer structure turned out to best obey reflection efficiency and long-term stability. The B₄C and Cr layers prevented mutual diffusion of the Si and Mg layers. For the spectral range λ=58  nm, a new multilayer Mo/Mg-based structure was developed; its reflection efficiency and long-term stability have been analyzed. We also investigated intrinsic stresses inherent for most of the multilayer structures and proposed possibilities for stress elimination.

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The effect of Be layers on the reflection coefficients of Mo/Be/Si multilayer mirrors in the extreme ultraviolet (EUV) region is reported. Samples were studied using laboratory and synchrotron based reflectometry, and high-resolution transmission electron microscopy. The samples under study have reflection coefficients above 71% at 13.5 nm and more than 72% at 12.9 nm in a near normal incidence mode. Calculations show that by optimizing the thickness of the Be layer it should be possible to increase the reflection coefficient by another 0.5-1%. These results are of considerable interest for EUV lithography.

We have studied the surface treatment of polished fused silica by neutralized Ar ions with energy of 500-1500 eV and incidence angles of 0-90°. We found the following regularities: for samples that passed the standard procedure of deep polishing (initial effective roughness σ(eff)∼0.5  nm), the effective roughness decreases to the ultrasmooth level (i.e., σ(eff)∼0.25  nm in the range of spatial frequencies q∈[4.9×10(-2)-63]  μm(-1)). The effect begins to be noticeable at the material removal of 150 nm and reaches saturation at depths of removal greater than 1 μm. For supersmooth samples (σ(eff)<0.3  nm), the effective roughness keeps the initial level at material removal down to tens of micrometers. The optimal ion energy range is 800-1300 eV (maximum smoothing effect); at higher energy some surface roughness degradation is observed. All the smoothing effects are observed at the incidence angle range θ(in)=0-35°. Increasing the ion energy above 1300 eV increases the etching rate by up to 4 μm per hour (J(ion)=0.8  mA/cm2), which allows for deep aspherization of sized substrates. The technique allows for manufacturing the optical elements for extreme ultraviolet and soft x-ray wavelength ranges with a numerical aperture of up to 0.6.

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