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The remarkable achievements in the area of integrated optical memories and optical random access memories (RAMs) together with the rapid adoption of optical interconnects in the Datacom and Computercom industries introduce a new perspective for information storage directly in the optical domain, enabling fast access times, increased bandwidth and transparent cooperation with optical interconnect lines. This article reviews state-of-the-art integrated optical memory technologies and optical RAM cell demonstrations describing the physical mechanisms of several key devices along with their performance metrics in terms of their energy, speed and footprint. Novel applications are outlined, concluding with the scaling challenges to be addressed toward allowing light to serve as both a data-carrying and data-storage medium.

We report an 8 × 8 silicon photonic integrated Arrayed Waveguide Grating Router (AWGR) targeted for WDM routing applications in O-band. The AWGR was designed for cyclic-frequency operation with a channel spacing of 10 nm. The fabricated AWGR exhibits a compact footprint of 700 × 270 μm. Static device characterization revealed 3.545 dB maximum channel loss non-uniformity with 2.5 dB best-case channel insertion losses and 11 dB channel crosstalk, in good agreement with the simulated results. Successful data routing operation is demonstrated with 25 Gb/s signals for all 8 × 8 AWGR port combinations with a maximum power penalty of 2.45 dB.

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We demonstrate a 200G capable WDM O-band optical transceiver comprising a 4-element array of Silicon Photonics ring modulators (RM) and Ge photodiodes (PD) co-packaged with a SiGe BiCMOS integrated driver and a SiGe transimpedance amplifier (TIA) chip. A 4×50 Gb/s data modulation experiment revealed an average extinction ratio (ER) of 3.17 dB, with the transmitter exhibiting a total energy efficiency of 2 pJ/bit. Data reception has been experimentally validated at 50 Gb/s per lane, achieving an interpolated 10E-12 bit error rate (BER) for an input optical modulation amplitude (OMA) of −9.5 dBm and a power efficiency of 2.2 pJ/bit, yielding a total power efficiency of 4.2 pJ/bit for the transceiver, including heater tuning requirements. This electro-optic subassembly provides the highest aggregate data-rate among O-band RM-based silicon photonic transceiver implementations, highlighting its potential for next generation WDM Ethernet transceivers.

We report on the simultaneous wavelength conversion operation of a dual-element semiconductor optical amplifier-Mach-Zehnder interferometer (SOA-MZI) array hybridly integrated on a 4-µm silicon-on-insulator (SOI) waveguide platform through thermocompression bonding. The SOAs are part of a six-element SOA array with both facets coupled on SOI through vertical and horizontal alignments. The device achieves almost two orders of magnitude reduction in footprint compared with state-of-the-art hybridly integrated SOA-MZI structures. We present for the first time experimental proof of the successful operation of a dual-element SOA-MZI device based on III-V technology on SoI that serves as a wavelength converter, with one SOA-MZI yielding error-free performance with a 0.8-dB power penalty at 12.5 Gb/s and the second SOA-MZI operating error-free at 10 Gb/s with a 2-dB power penalty.Index Terms-Mach-Zehnder interferometer, semiconductor optical amplifier, wavelength conversion, hybrid integration, thermocompression bonding, dual-facet coupling.

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