III–V-on-Si Photonic Crystal Nanocavity Laser Technology for Optical Static Random Access Memories

Alexoudi, Theoni; Fitsios, D.; Bazin, Alexandre; Monnier, P.; Raj, R.; Miliou, Amalia; Kanellos, George T.; Pleros, Nikos; Raineri, Fabrice

doi:10.1109/jstqe.2016.2593636

Cited by 39 publications

(23 citation statements)

References 44 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The key property of the threshold gain is the asymmetry, which stems from the finite value of the α-parameter in combination with the mirror phase. For oscillation, the laser has to fulfil the phase condition, equation (7). As the threshold gain is increased when the laser is detuned, the laser phase is changed through the amplitude-phase coupling of α, which forces the laser to oscillate further from the reflection peak.…”

Section: Coupled-mode Descriptionmentioning

confidence: 99%

“…In particular, photonic crystal membrane structures allow the realization of ultra-small optical cavities with high quality factors and since the first demonstration of a photonic crystal laser [1] there has been significant progress in the properties of such lasers. [2][3][4][5][6][7][8] Thus, electrically driven lasers [4,5] and lasers modulated at gigahertz rates with ultra-low power consumption [4] have been demonstrated. An important advantage of the photonic crystal platform is the possibility to change the cavity properties by modifying the photonic crystal geometry, e.g.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Theory of Self‐pulsing in Photonic Crystal Fano Lasers

Rasmussen

Mørk

2017

Laser & Photonics Reviews

View full text Add to dashboard Cite

Laser self‐pulsing was a phenomenon exclusive to macroscopic lasers until recently, where self‐starting laser pulsation in a microscopic photonic crystal Fano laser was reported. In this paper a theoretical model is developed to describe the Fano laser, including descriptions of the highly‐dispersive Fano mirror, the laser frequency and the threshold gain. The model is based upon a combination of conventional laser rate equations and coupled‐mode theory. The dynamical model is used to demonstrate how the laser has two regimes of operation, continuous‐wave output and self‐pulsing, and these regimes are characterised using phase diagrams, establishing the regime of self‐pulsing numerically. Furthermore, the physics behind the self‐pulsing mechanism are explained in detail and it is demonstrated how cavity absorption makes the Fano mirror function as a saturable absorber, leading to Q‐switched pulse generation. A stability analysis is used to demonstrate how the dominant mechanism of instability is relaxation oscillations becoming un‐damped. Finally the effect of varying key self‐pulsing parameters is investigated by characterisation of the change in self‐pulsing regions.

show abstract

Section: Coupled-mode Descriptionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Theory of Self‐pulsing in Photonic Crystal Fano Lasers

Rasmussen

Mørk

2017

Laser & Photonics Reviews

View full text Add to dashboard Cite

show abstract

“…To this end, photonic integration processes have matured to the point where a wealth of optical FF and RAM memory configurations have been successfully demonstrated [33][34][35][36][37][38][39][40][41], with most of A more detailed view of the block diagram describing the logical circuit operation of the 1 × 4 ML is shown in Figure 1b, comprising four parallel CAM cells. The CAM cells have their outputs combined at an inline Sense Amplifier (SA) and are then inter-connected to the encoder/decoder network for communication with the RAM table.…”

Section: Monolithic Photonic Integration For Optical Memoriesmentioning

confidence: 99%

“…To this end, photonic integration processes have matured to the point where a wealth of optical FF and RAM memory configurations have been successfully demonstrated [33][34][35][36][37][38][39][40][41], with most of these demonstrations relying on the mature SOA switching technology, owing to its high-gain, high-speed, and high-yield performance characteristics [2]. In this paper, our analysis draws from the architecture of an FF memory with two cross-coupled asymmetric SOA-MZI switches, as illustrated in Figure 2a, which was initially developed in [37] and more recently theoretically investigated in the time and frequency domain in [43].…”

Section: Monolithic Photonic Integration For Optical Memoriesmentioning

confidence: 99%

“…Initially, optical memories were conceived as high bandwidth alternatives of electronic RAMs to overcome the "Memory Wall", achieving multiple elementary Flip-Flops (FFs) with high speed and low power consumption credentials [33][34][35][36][37][38][39][40][41], including coupled SOAs [34], III-V-on-SOI microdisk lasers [35], and polarization bistable Vertical Cavity Surface Emitting Laser (VCSEL) [36], as well as coupled SOA-based Mach-Zehnder Interferometers (SOA-MZIs) [33,37]. Optical FFs, serving as optical storing units, were then combined with random access controlling gates, forming functional optical RAMs, so far demonstrated either as fully functional architectures using mature SOA-based devices [37][38][39] or as discrete components based on photonic crystals [40,41]. These have both been experimentally shown to support speeds beyond 10 Gb/s, while in-depth frequency theoretical memory speed analyses [42,43] and validated time-domain SOA-based memory simulations [43,44] have revealed potential rates of up to 40 Gb/s.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Integrated Optical Content Addressable Memories (CAM) and Optical Random Access Memories (RAM) for Ultra-Fast Address Look-Up Operations

et al. 2017

Self Cite

View full text Add to dashboard Cite

Electronic Content Addressable Memories (CAM) implement Address Look-Up (AL) table functionalities of network routers; however, they typically operate in the MHz regime, turning AL into a critical network bottleneck. In this communication, we demonstrate the first steps towards developing optical CAM alternatives to enable a re-engineering of AL memories. Firstly, we report on the photonic integration of Semiconductor Optical Amplifier-Mach Zehnder Interferometer (SOA-MZI)-based optical Flip-Flop and Random Access Memories on a monolithic InP platform, capable of storing the binary prefix-address data-bits and the outgoing port information for next hop routing, respectively. Subsequently the first optical Binary CAM cell (B-CAM) is experimentally demonstrated, comprising an InP Flip-Flop and a SOA-MZI Exclusive OR (XOR) gate for fast search operations through an XOR-based bit comparison, yielding an error-free 10 Gb/s operation. This is later extended via physical layer simulations in an optical Ternary-CAM (T-CAM) cell and a 4-bit Matchline (ML) configuration, supporting a third state of the "logical X" value towards wildcard bits of network subnet masks. The proposed functional CAM and Random Access Memories (RAM) sub-circuits may facilitate light-based Address Look-Up tables supporting search operations at 10 Gb/s and beyond, paving the way towards minimizing the disparity with the frantic optical transmission linerates, and fast re-configurability through multiple simultaneous Wavelength Division Multiplexed (WDM) memory access requests.

show abstract

Silicon Photonics for Future Computing Systems

Shafiee

Pasricha

Nikdast

2022

Wiley Encyclopedia of Electrical and Electronics Engineering

View full text Add to dashboard Cite

The primary goal of this article is to provide an overview of silicon photonics technology and its applications in the design and improvement of current and future computing systems. We start by reviewing silicon photonics technology and introducing some of its benefits and challenges as well as providing some background on it. Next, we introduce some fundamental silicon photonic components in the design of silicon photonic integrated circuits (PICs) and optical interconnect for computing systems as well as their operating principles and applications. These components can be active, such as photodetectors and optical modulators, or passive, such as silicon‐on‐insulator (SOI) waveguides. Subsequently, we discuss the application of silicon photonics to improve the communication and computation infrastructure in future computing systems, while reviewing the state‐of‐the‐art and some design and implementation challenges. Finally, we discuss several research opportunities to push forward the application of silicon photonics in the design of future computing systems.

show abstract

III–V-on-Si Photonic Crystal Nanocavity Laser Technology for Optical Static Random Access Memories

Cited by 39 publications

References 44 publications

Theory of Self‐pulsing in Photonic Crystal Fano Lasers

Theory of Self‐pulsing in Photonic Crystal Fano Lasers

Integrated Optical Content Addressable Memories (CAM) and Optical Random Access Memories (RAM) for Ultra-Fast Address Look-Up Operations

Silicon Photonics for Future Computing Systems

Contact Info

Product

Resources

About