The Very High Efficiency Solar Cell (VHESC) program is developing integrated optical system-PV modules for portable applications that operate at greater than 50% efficiency. We are integrating the optical design with the solar cell design, and have entered previously unoccupied design space. Our approach is driven by proven quantitative models for the solar cell design, the optical design, and the integration of these designs. Optical systems efficiency with an optical efficiency of 93% and solar cell device results under ideal dichroic splitting optics summing to 42Á7 W 2Á5% are described.

This letter reports interdigitated back contact silicon heterojunction (IBC-SHJ) solar cells which combine the performance benefits of both back contact and heterojunction technologies while reducing their limitations. Low temperature (<200°C) deposited p- and n-type amorphous silicon used to form interdigitated heteroemitter and contacts in the rear preserves substrate lifetime while minimizes optical losses in the front. The IBC-SHJ structure is ideal for diagnosing surface passivation quality, which is analyzed and measured by internal quantum efficiency and minority carrier lifetime measurements. Initial cells have independently confirmed efficiency of 11.8% under AM1.5 illumination. Simulations indicate efficiencies greater than 20% after optimization.

The structure of hydrogenated silicon (Si:H) films deposited by rf and dc plasma process on Si (100) and (111) wafers is correlated with the surface passivation quality and heterojunction cell performance. Microstructural defects associated with SiH2 bonding and apparent ion bombardment in dc plasmas have little or no adverse effect on passivation or cell properties, while presence of crystallinity in Si:H i layer severely deteriorates surface passivation and cell open circuit voltage (Voc). Excellent surface passivation (lifetime of >1ms) and high efficiency cells (>18%) with Voc of 694mV are demonstrated on n-type textured Czochralski wafer using dc plasma process.

Interdigitated back contact silicon heterojunction (IBC‐SHJ) solar cells have the potential for high open circuit voltage (VOC) due to the surface passivation and heterojunction contacts, and high short circuit current density (JSC) due to all back contact design. Intrinsic amorphous silicon (a‐Si:H) buffer layer at the rear surface improve the surface passivation hence VOC and JSC, but degrade fill factor (FF) from an “S” shape J–V curve. Two‐dimensional (2D) simulation using “Sentaurus device” demonstrates that the low FF is related to the valence band offset (energy barrier) at the hetero‐interface. Three approaches to the buffer layer are suggested to improve the FF: (1) reduced thickness, (2) increased conductivity, and/or (3) reduced band gap. Experimental IBC‐SHJ solar cells with reduced buffer thickness (<5 nm) and increased conductivity with low boron doping significantly improves FF, consistent with simulation. However, this has only marginal effect on efficiency since JSC and VOC also decrease due to poor surface passivation. A narrow band gap a‐Si:H buffer layer improves cell efficiency to 13.5% with unoptimized passivation quality. These results demonstrate that tailoring the hetero‐interface band structure is critical for achieving high FF. Simulations predicts that efficiences >23% are possible on planar devices with optimized pitch dimensions and achievable surface passivation, and 26% with light trapping. This work provides criterion to design IBC‐SHJ solar cell structures and optimize cell performance. Copyright © 2010 John Wiley & Sons, Ltd.

This paper presents experimental evidence that silicon solar cells can achieve &gt;750 mV open circuit voltage at 1 Sun illumination providing very good surface passivation is present. 753 mV local open circuit voltage was measured on a 50 μm thick non-metalized silicon heterojunction solar cell. The paper also considers a recombination model at open circuit based on the recent Auger and radiative recombination parameterization and the measured surface saturation current density. The loss mechanisms at open circuit and several practical pathways to achieve &gt;760 mV open circuit voltage in silicon heterojunction solar cells are discussed.

We have investigated the influence of the spectral albedo on the power output of bifacial solar cells. We adapted the Shockley-Queisser radiative flux balance framework to account for a variation of the spectrum and intensity of the incoming light. We find that the ideal band gap and the maximum efficiency depend on the spectral albedo of the surroundings and that optimal cell performance cannot be assessed when only accounting for a spectrally independent albedo. With a spectral albedo model, we predict that the power output for a bifacial silicon solar cell surrounded by green grass is 3.1% higher than for a wavelength-independent albedo, and even 5.2% higher for white sand. We experimentally verify this trend for silicon heterojunction solar cells and we derive the ideal spectral albedo.

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